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IRLB3034PBF
+БОМMOSFET N-CH 40V 195A TO220AB
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IRLB3034PBF
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Лист данных IRLB3034PBF DataSheet
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В наличии2342
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Series | HEXFET® |
| Part Status | Obsolete |
| Base Product Number | IRLB3034 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 195A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 162 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 10315 pF @ 25 V |
| Power Dissipation (Max) | 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package | TO-220-3 |
| Packaging | Tube |
Обзор
Description
IRLB3034PBF is likely an advanced-level course designed to deepen students' understanding of a specialized subject within a broader discipline. The course code suggests that it might pertain to a field such as International Relations, Law, or Business (as inferred from 'IR', 'L', or 'B'). The course likely involves a combination of lectures, seminars, and practical activities to facilitate in-depth learning and application of theoretical concepts. Students may be expected to engage in critical analysis, research projects, and collaborative discussions. Evaluation could include exams, essays, or presentations. The course might also have prerequisites, requiring students to have completed introductory courses in the relevant field. For precise details, including course content, objectives, and requirements, it's best to consult the course syllabus or contact the academic department directly.
Equivalent
1. STP140NF75 from STMicroelectronics.
2. NTP75N03 from ON Semiconductor.
3. FDB7030L from Fairchild Semiconductor.
4. FDP047N10 from Infineon Technologies.
These equivalents offer similar voltage, current, and RDS(on) characteristics, but it's essential to check datasheets for exact specifications and compatibility with your application.
Features
1. N-Channel MOSFET: Facilitates efficient switching and amplification.
2. Voltage and Current Ratings: Operates with a maximum drain-to-source voltage of 40V and a continuous drain current of 195A at 25°C.
3. Low On-Resistance: Exhibits a low R_DS(on) of approximately 4.5mΩ, minimizing power loss and improving efficiency.
4. Fast Switching: Provides quick turn-on and turn-off times, enhancing performance in high-speed applications.
5. TO-220AB Package: Offers a robust and thermally efficient design, suitable for heat dissipation.
6. Rugged Construction: Features high avalanche energy and dV/dt capability, ensuring reliability in demanding environments.
7. Wide Range of Applications: Ideal for switching applications, including power management, motor controls, and DC-DC converters.
These features make the IRLB3034PBF suitable for use in high-performance applications where efficiency and reliability are critical.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate controls the flow of current between the drain and source.
2. Drain (D): The drain pin is where the current enters the MOSFET from the load.
3. Source (S): The source pin is where the current exits the MOSFET.
The IRLB3034PBF is designed for high-power applications and is commonly used for switching and amplifying electronic signals in various devices. It is known for its low on-state resistance and high current-carrying capability, making it suitable for applications like motor control, power supplies, and other circuits requiring efficient power management.
Manufacturer
Application
1. Power Supply Units: Utilized in switched-mode power supplies (SMPS) for improved energy efficiency.
2. Motor Drives: Used in driving motors in industrial and consumer electronics due to its robust performance.
3. Battery Management Systems: Applied in battery protection and management circuits for better power handling.
4. Automotive Electronics: Used in automotive applications for control and power regulation.
5. DC-DC Converters: Integral in designing efficient DC-DC converter circuits.
Its low on-resistance and high current handling make it suitable for high-performance applications in these areas.
Package
Frequently Asked Questions
Q: What is the maximum continuous drain current for the IRLB3034PBF at 25°C?
A: It can handle up to 195A (Tc) at 25°C, making it suitable for high-current DC applications.
Q: What is the typical drive voltage requirement to achieve minimum Rds(on)?
A: A gate drive voltage of 10V is required for the lowest on-resistance of 1.7mOhm, but it is also logic-level compatible at 4.5V.
Q: Is this MOSFET suitable for low-voltage motor control applications?
A: Yes, with a 40V Vdss and ultra-low Rds(on), it is ideal for battery-powered motor drives and power management.
Q: What is the maximum power dissipation rating of this device?
A: The maximum power dissipation is 375W (Tc), allowing robust thermal performance in high-power designs.
Q: Can this MOSFET be driven directly by a 3.3V microcontroller?
A: While it has a logic-level threshold, the recommended drive voltage is 4.5V or higher for full saturation; 3.3V may not fully enhance it.
Q: What is the maximum junction temperature range for the IRLB3034PBF?
A: It operates reliably from -55°C to +175°C, suitable for harsh industrial environments.