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BSC12DN20NS3G
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Производителькомпанией Infineon Technologies
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Мфр. Часть #BSC12DN20NS3G
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Лист данных BSC12DN20NS3G DataSheet
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Спецификации
| Атрибут | Ценность |
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity | 5000 |
| Technology | Si |
| REACH - SVHC | Details |
| Mounting Type | SMD/SMT |
| Package / Case | TDSON-8 |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 200 V |
| Id - Continuous Drain Current | 11.3 A |
| Rds On | 108 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 8.7 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 50 W |
| Channel Mode | Enhancement |
| Tradename | OptiMOS |
| Configuration | Single |
| Fall Time | 3 ns |
| Height | 1.27 mm |
| Length | 5.9 mm |
| Rise Time | 4 ns |
| Series | OptiMOS 3 |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 10 ns |
| Typical Turn - On Delay Time | 6 ns |
| Width | 5.15 mm |
| Part # Aliases | SP000781774 BSC12DN20NS3GATMA1 |
| Unit Weight | 0.004375 oz |
| Forward Transconductance - Min | 6 S |
Обзор
Description
The BSC12DN20NS3G is a high-performance N-channel MOSFET designed for various applications in power management and switching. It features low on-resistance, which minimizes power loss and enhances efficiency, making it suitable for use in DC-DC converters, motor drives, and other power electronics.
Key specifications include a maximum drain-source voltage (V_DS) of 200V, a continuous drain current (I_D) rating of 12A, and a low R_DS(on) value that contributes to its effective heat management. The device is housed in a compact DPAK package, facilitating easy integration into circuit designs.
Its fast switching capabilities allow for improved response times in high-speed applications, while its rugged design ensures reliability under varying operational conditions. The BSC12DN20NS3G is ideal for engineers seeking a robust solution for efficient power conversion and management in both industrial and consumer electronics.
Key specifications include a maximum drain-source voltage (V_DS) of 200V, a continuous drain current (I_D) rating of 12A, and a low R_DS(on) value that contributes to its effective heat management. The device is housed in a compact DPAK package, facilitating easy integration into circuit designs.
Its fast switching capabilities allow for improved response times in high-speed applications, while its rugged design ensures reliability under varying operational conditions. The BSC12DN20NS3G is ideal for engineers seeking a robust solution for efficient power conversion and management in both industrial and consumer electronics.
Equivalent
The BSC12DN20NS3G is a N-channel MOSFET. Equivalent products include the IRF3205, BSC050N06NS3, and STP12NM60. However, it's essential to compare specifications such as voltage rating, current capacity, RDS(on) value, and package type to ensure compatibility in specific applications. Always refer to the manufacturer's datasheets for precise equivalency.
Features
The BSC12DN20NS3G is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 20V, making it suitable for low-voltage applications.
2. Current Handling: The device can handle continuous drain current (I_D) up to 12A, enabling efficient power management.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 12 mΩ, which minimizes power loss and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 1V to 3V, allowing for easy drive with logic-level signals.
5. Package Type: It comes in a DPAK package for robust thermal performance and ease of integration into circuit boards.
6. Fast Switching Speed: The MOSFET supports high-speed operation, making it ideal for applications like switching power supplies and motor drives.
Overall, the BSC12DN20NS3G is suitable for a variety of power management solutions due to its combination of efficiency, performance, and reliability.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 20V, making it suitable for low-voltage applications.
2. Current Handling: The device can handle continuous drain current (I_D) up to 12A, enabling efficient power management.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 12 mΩ, which minimizes power loss and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 1V to 3V, allowing for easy drive with logic-level signals.
5. Package Type: It comes in a DPAK package for robust thermal performance and ease of integration into circuit boards.
6. Fast Switching Speed: The MOSFET supports high-speed operation, making it ideal for applications like switching power supplies and motor drives.
Overall, the BSC12DN20NS3G is suitable for a variety of power management solutions due to its combination of efficiency, performance, and reliability.
Pinout
The BSC12DN20NS3G is a N-channel MOSFET from the Infineon family of devices, designed for high-efficiency applications. It features a total of 5 pins. The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET operation and is used to turn the device on and off.
2. Drain (D) - The terminal through which the current flows out of the MOSFET.
3. Source (S) - The terminal through which the current flows into the MOSFET.
The BSC12DN20NS3G is characterized by low on-resistance, high-speed switching, and is suitable for applications such as DC-DC converters, motor control, and power management systems. Its compact package and efficient performance make it a common choice for modern electronic circuits.
1. Gate (G) - Controls the MOSFET operation and is used to turn the device on and off.
2. Drain (D) - The terminal through which the current flows out of the MOSFET.
3. Source (S) - The terminal through which the current flows into the MOSFET.
The BSC12DN20NS3G is characterized by low on-resistance, high-speed switching, and is suitable for applications such as DC-DC converters, motor control, and power management systems. Its compact package and efficient performance make it a common choice for modern electronic circuits.
Manufacturer
The BSC12DN20NS3G is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer that specializes in providing a wide range of semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its focus on power management, automotive electronics, and security solutions. Infineon plays a significant role in the development of technologies for energy efficiency and is a key player in the market for power semiconductors, including MOSFETs, IGBTs, and other related components. The BSC12DN20NS3G is a specific type of MOSFET designed for high-performance applications, reflecting the company’s commitment to innovation in the semiconductor field.
Application
The BSC12DN20NS3G is a N-channel MOSFET primarily used in power management applications. Its application areas include:
1. Power Supply: Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
2. Motor Control: Employed in brushless DC motor drives for efficient switching.
3. DC-DC Converters: Utilized in buck, boost, and buck-boost converters for energy conversion.
4. Load Switching: Serves in load management for various electronic devices.
5. Class D Amplifiers: Applied in audio amplification systems for improved efficiency.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications.
1. Power Supply: Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
2. Motor Control: Employed in brushless DC motor drives for efficient switching.
3. DC-DC Converters: Utilized in buck, boost, and buck-boost converters for energy conversion.
4. Load Switching: Serves in load management for various electronic devices.
5. Class D Amplifiers: Applied in audio amplification systems for improved efficiency.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications.
Package
The BSC12DN20NS3G is packaged in a DPAK (TO-252) type package, which is a surface-mount device (SMD) package suitable for power applications.
