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BSP16T1G
+БОМTRANS PNP 300V 0.1A SOT223
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ПроизводительОнсеми
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Мфр. Часть #BSP16T1G
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В наличии6624
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Part Status | Active |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (h FE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
| Power - Max | 1.5 W |
| Frequency - Transition | 15MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | SOT-223 (TO-261) |
| Base Product Number | BSP16 |
Обзор
Description
Key specifications include a maximum drain-source voltage (V_DS) typically rated at 60V, a continuous drain current (I_D) of around 16A, and a fast switching speed, which enhances performance in high-frequency applications. The BSP16T1G also includes built-in protection features like avalanche rating, making it robust against voltage spikes.
Overall, this MOSFET is valued for its reliability, efficiency, and versatility in a range of electronic applications, from consumer electronics to automotive systems.
Equivalent
Features
1. Type: N-channel MOSFET
2. Voltage Rating: Maximum drain-source voltage (V_DS) of 60V.
3. Current Rating: Continuous drain current (I_D) of up to 7A.
4. R_DS(on): Low on-resistance (typically around 0.25 Ohms) for efficient power handling.
5. Switching Speed: Fast switching capabilities, suitable for high-frequency applications.
6. Package Type: Available in SOT-23 package, which offers a compact footprint.
7. Thermal Management: Good thermal performance with a maximum junction temperature of 150°C.
8. Applications: Ideal for power management, motor control, and other electronic switching applications.
Overall, the BSP16T1G provides efficient performance in a small package, making it suitable for modern electronic circuits.
Pinout
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The terminal through which the current exits the device when it is in the "on" state.
3. Source (S): The terminal through which the current enters the device.
The BSP16T1G is commonly used in various applications, including switching and amplification in electronic circuits, due to its low on-resistance and high-speed switching capabilities. Its compact size and efficiency make it suitable for use in power management systems and general-purpose load switching.
Manufacturer
Founded in 1999, ON Semiconductor has expanded its portfolio through strategic acquisitions and innovations. The company is committed to sustainability and reducing its environmental impact by providing energy-efficient products and solutions. With a strong presence worldwide, ON Semiconductor is recognized for its expertise in power management and sensor technologies, catering to the needs of various industries.