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BSP170PH6327XTSA1
+БОМMOSFET P-CH 60V 1.9A SOT223-4
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Производителькомпанией Infineon Technologies
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Мфр. Часть #BSP170PH6327XTSA1
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В наличии7877
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Series | SIPMOS® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 1.9A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 25 V |
| Power Dissipation (Max) | 1.8W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT223-4 |
| Package / Case | TO-261-4, TO-261AA |
| Base Product Number | BSP170 |
Обзор
Description
The device is housed in a surface-mount package, which facilitates easier integration into circuits and aids in space-saving designs. Its gate threshold voltage (Vgs) allows for low-voltage operation, enhancing its utility in battery-powered devices. Thermal characteristics enable effective heat dissipation, contributing to reliable performance in demanding conditions.
Overall, the BSP170PH6327XTSA1 is a versatile MOSFET that caters to applications in consumer electronics, automotive systems, and industrial equipment due to its robust specifications and efficiency.
Equivalent
Features
1. Voltage Ratings: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various applications.
2. Current Ratings: The continuous drain current (I_D) is up to 1.2A, allowing it to handle moderate loads.
3. On-Resistance: Offers a low R_DS(on) of approximately 0.5Ω, ensuring minimal power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is low, enabling easy driving with standard logic levels.
5. Package: It comes in a SOT-23 package, providing a compact footprint for space-constrained applications.
6. Applications: Ideal for low-voltage switching, power management, and signal amplification in consumer electronics, automotive, and industrial systems.
Overall, the BSP170PH6327XTSA1 delivers efficiency and performance in a small package, making it a versatile choice for designers.
Pinout
1. Gate (G): This pin controls the operation of the MOSFET. A voltage applied here allows current to flow from the drain to the source.
2. Drain (D): This is the terminal through which the current enters the MOSFET when it is turned on.
3. Source (S): This terminal allows current to exit the MOSFET when it is conducting.
The device is commonly used in switching applications, such as in power management and signal processing circuits, due to its low on-resistance and fast switching capabilities.
Manufacturer
Nexperia focuses on high-volume manufacturing and offers a broad portfolio of products, including transistors, diodes, and integrated circuits. The BSP170 is a specific type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), known for its low on-resistance and fast switching capabilities, making it suitable for various electronic circuits and applications.
Overall, Nexperia is recognized for its commitment to quality, efficiency, and innovation in semiconductor technology, catering to diverse markets and customer needs.