Изображения являются только для ссылки
C2M1000170D
+БОМSICFET N-CH 1700V 4.9A TO247-3
-
ПроизводительКомпания Wolfspeed, Inc.
-
Мфр. Часть #C2M1000170D
-
Лист данных C2M1000170D DataSheet
-
В наличии7715
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Series | Z-FET™ |
| PartStatus | Obsolete |
| BaseProductNumber | C2M1000170 |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 1700 V |
| Current-ContinuousDrain(Id)@25°C | 4.9A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 20V |
| RdsOn(Max)@Id,Vgs | 1.1Ohm @ 2A, 20V |
| Vgs(th)(Max)@Id | 4V @ 500µA |
| GateCharge(Qg)(Max)@Vgs | 13 nC @ 20 V |
| Vgs(Max) | +25V, -10V |
| InputCapacitance(Ciss)(Max)@Vds | 191 pF @ 1000 V |
| PowerDissipation(Max) | 69W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-3 |
| Package | TO-247-3 |
| Packaging | Tube |
Обзор
Description
Equivalent
- Infineon: IMZA120R017M1H
- ROHM: SCT3040KR
- STMicroelectronics: SCTW100N170G2V
- ON Semiconductor: NVHL160N170SC1
These alternatives offer similar voltage and current ratings, suitable for high-power applications. Always check datasheets for exact specifications and compatibility.
Features
- Voltage Rating: 1700V
- Current Rating: 100A (pulsed)
- Low On-Resistance (RDS(on)): 45 mΩ (typical)
- Fast Switching: Optimized for high-frequency applications
- High Temperature Operation: Reliable performance up to 175°C
- Low Gate Charge (Qg): Enhances efficiency in power systems
- Avalanche Rated: Robust against voltage spikes
- Package: TO-247-4L (4-lead) for reduced inductance
Designed for high-power applications like EV charging, renewable energy, and industrial systems, it offers high efficiency and thermal stability.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate relative to the source turns the device on.
2. Drain (D): This pin is connected to the load. Current flows from the drain to the source when the MOSFET is on.
3. Source (S): This is the terminal through which current exits the device. It is typically connected to the ground or the negative side of the power supply.
The C2M1000170D is commonly used in high-power applications due to its high efficiency and thermal performance, taking advantage of the benefits of silicon carbide technology.
Manufacturer
Application
Package
Frequently Asked Questions
Q: What is the maximum voltage rating of the C2M1000170D?
A: It has a drain-to-source voltage (Vdss) of 1700 V, suitable for high-voltage applications.
Q: What is the continuous drain current at 25°C?
A: The continuous drain current (Id) is 4.9 A at a case temperature of 25°C.
Q: What is the typical on-resistance (Rds(on))?
A: The maximum Rds(on) is 1.1 Ohm at a gate voltage of 20 V and drain current of 2 A.
Q: What gate drive voltage is recommended?
A: A drive voltage of 20 V is used to achieve low Rds(on), with a maximum Vgs range of +25 V to -10 V.
Q: Is this component suitable for high-frequency switching?
A: Yes, it features very low gate charge (13 nC) and input capacitance (191 pF), enabling efficient high-speed switching.
Q: What is the maximum power dissipation?
A: The maximum power dissipation is 69 W at a case temperature (Tc) of 25°C.
Q: What package type does this device use?
A: It comes in a standard through-hole TO-247-3 package, typically supplied in tubes.