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C3M0065100K
+БОМSICFET N-CH 1000V 35A TO247-4L
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ПроизводительКомпания Wolfspeed, Inc.
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Мфр. Часть #C3M0065100K
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Лист данных C3M0065100K DataSheet
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Пакет TO-247-4
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В наличии1451
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package / Case | Tube |
| Series | C3M™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain(Id) @ 25°C | 35A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 15V |
| Rds On(Max) @ Id Vgs | 78mOhm @ 20A, 15V |
| Vgs(th)(Max) @ Id | 3.5V @ 5mA |
| Gate Charge(Qg)(Max) @ Vgs | 35 nC @ 15 V |
| Vgs(Max) | +19V, -8V |
| Input Capacitance(Ciss)(Max) @ Vds | 660 pF @ 600 V |
| Power Dissipation (Max) | 113.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4L |
Обзор
Description
- Low on-resistance (RDS(on)): Enhances efficiency in high-power systems.
- Fast switching: Reduces switching losses, ideal for high-frequency designs.
- High-temperature operation: Reliable performance in harsh environments.
- SiC technology: Offers superior thermal conductivity and breakdown voltage compared to silicon.
Common applications include electric vehicle (EV) charging, solar inverters, and industrial power supplies. Its robust design ensures improved energy efficiency and reduced system size.
For detailed specs, refer to Wolfspeed’s datasheet.
Equivalent
- Infineon: IMZA65R100M1H (650V, 100mΩ)
- ROHM: SCT3040KR (650V, 100mΩ)
- STMicroelectronics: SCTW100N65G2V (650V, 100mΩ)
These offer similar performance in SiC MOSFET technology. Verify pinout and specs for compatibility.
Features
- Low On-Resistance (RDS(on)): 100mΩ (typ.) at 15V VGS, reducing conduction losses.
- High Voltage Rating: 650V, suitable for industrial and automotive applications.
- Fast Switching: Low gate charge (QG) and output capacitance (COSS), enabling high-frequency operation.
- High Temperature Operation: Robust performance up to 175°C.
- Low Reverse Recovery Losses: SiC technology minimizes switching losses.
- Avalanche Rated: Enhanced ruggedness for harsh environments.
Ideal for power supplies, EV charging, and renewable energy systems.
Pinout
Pin Functions:
1. Gate (G) – Controls switching.
2. Drain (D) – High-voltage terminal.
3. Source (S) – Current return path.
4. Kelvin Source (Sₖ) – Separate sense terminal for improved gate drive accuracy, reducing parasitic inductance.
This configuration enhances high-frequency performance and reduces switching losses.
Application
- Electric Vehicles (EVs): On-board chargers, DC-DC converters.
- Renewable Energy: Solar inverters, wind power systems.
- Industrial Power Supplies: High-frequency SMPS, UPS systems.
- Data Centers: Server power supplies, PFC circuits.
- Aerospace & Defense: High-reliability power conversion.
Its 650V/60mΩ rating and fast switching make it ideal for high-power, high-frequency designs requiring efficiency and thermal performance.
