FDD8444

Изображения являются только для ссылки

FDD8444

+БОМ

MOSFET N-CH 40V 145A TO252AA

  • ПроизводительОнсеми

  • Мфр. Часть #FDD8444

  • Лист данных FDD8444 DataSheet

  • Пакет TO-252-3

  • В наличии4562

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain(Id) @ 25°C 145A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 5.2mOhm @ 50A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 116 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 6195 pF @ 25 V
Power Dissipation (Max) 153W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA

Обзор

Description

The FDD8444 is a dual N-channel MOSFET designed for high-efficiency power management applications, such as DC-DC converters and motor control. Key features include:
- Low On-Resistance (RDS(on)): Enhances efficiency by minimizing power loss.
- High Current Handling (up to 8A per channel): Suitable for demanding loads.
- Compact Package (SOIC-8): Saves board space.
- Fast Switching: Optimized for high-frequency circuits.
Common uses include synchronous rectification, load switching, and battery protection. Always refer to the datasheet for detailed specifications and application guidelines.

Equivalent

Equivalent products to the FDD8444 (N-channel MOSFET) include:
- FDD8447L (Similar specs, higher current rating)
- IRF3708 (Comparable voltage/current)
- AOD4184 (Lower RDS(on), similar VDS)
- STP80NF55-06 (55V, higher current)
Check datasheets for exact compatibility in your circuit.

Pinout

The FDD8444 is a dual N-channel MOSFET in an 8-pin SOIC package.
Pin Functions:
1. Gate 1 (G1): Controls the first MOSFET.
2. Source 1 (S1): Source terminal for the first MOSFET.
3. Drain 1 (D1): Drain terminal for the first MOSFET.
4. Drain 2 (D2): Drain terminal for the second MOSFET.
5. Source 2 (S2): Source terminal for the second MOSFET.
6. Gate 2 (G2): Controls the second MOSFET.
7. NC (No Connection): Unused pin.
8. NC (No Connection): Unused pin.
Key Features:
- 30V drain-source voltage (VDS)
- 8.5mΩ typical RDS(on)- Dual independent MOSFETs for power switching applications.

Manufacturer

The FDD8444 is a power MOSFET manufactured by ON Semiconductor (now known as onsemi after rebranding in 2021).
onsemi is a global semiconductor company specializing in energy-efficient technologies, including power management, analog, and sensor solutions. It serves industries like automotive, industrial, and consumer electronics. Known for reliability and innovation, onsemi provides components for power conversion, motor control, and other high-efficiency applications.
The FDD8444 is commonly used in switching circuits, power supplies, and motor drivers.

Application

The FDD8444 is a dual N-channel MOSFET used in various power management applications. Key areas include:
1. DC-DC Converters – Efficient voltage regulation in power supplies.
2. Motor Control – Driving and switching in small motors.
3. Load Switching – Power distribution in portable devices.
4. Battery Management – Protection and charging circuits.
5. LED Drivers – Controlling LED lighting systems.
Its low on-resistance (RDS(on)) and compact package (SO-8) make it suitable for space-constrained, high-efficiency designs.

Продукты, связанные с FDD8444

  • Быстрая цитата

  • Отправьте запрос на котировку FDD8444 Используя эту форму, мы ответим в течение 12 часов.