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FDP027N08B
+БОМMOSFET N-CH 80V 120A TO220-3
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ПроизводительОнсеми
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Мфр. Часть #FDP027N08B
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Лист данных FDP027N08B DataSheet
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В наличии28857
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | onsemi |
| Package | Tube |
| Series | PowerTrench® |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 80 V |
| Current-ContinuousDrain(Id)@25°C | 120A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 2.7mOhm @ 100A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 178 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 13530 pF @ 40 V |
| PowerDissipation(Max) | 246W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220-3 |
Обзор
Description
1. Overview: The course/module could be part of a larger program, focusing on a specialized area within a field like finance, development, programming, or another discipline.
2. Content: Typically, such courses cover foundational theories, methodologies, practical applications, and contemporary issues relevant to the subject matter.
3. Objectives: Aimed at developing specific skills, knowledge, or competencies, preparing participants for advanced study or professional application.
4. Structure: It might include lectures, workshops, practical sessions, assessments, and project work.
5. Audience: Targeted at students, professionals, or individuals seeking specialization or upskilling in the topic addressed by the code.
For precise details, consult the institution or organization offering the course/module, as they provide specific information regarding syllabus, prerequisites, and outcomes.
Equivalent
1. IRF2807 by Infineon Technologies
2. STP80NF55 by STMicroelectronics
3. AOT8N60 by Alpha & Omega Semiconductor
These equivalents can vary in specific specifications, so it's important to verify parameters like voltage, current ratings, and package type to ensure compatibility for your application. Always consult datasheets to confirm equivalency.
Features
1. N-Channel MOSFET: Suitable for applications that require switching and amplification.
2. Low On-Resistance: Offers low R_DS(on), resulting in reduced power loss and enhanced efficiency.
3. High Continuous Drain Current: Can handle significant current levels, making it suitable for medium to high-power applications.
4. Fast Switching Speed: Enables rapid switching, which is beneficial in high-frequency applications.
5. Robust Design: Typically supports high avalanche energy and ruggedness, ensuring reliability under demanding conditions.
6. Thermal Performance: Designed to manage heat effectively, which is vital for preventing overheating and ensuring longevity.
7. Various Packages: Often available in industry-standard packages for easy integration into existing designs.
These features make the FDP027N08B a versatile component for applications such as power supplies, motor drives, and various consumer electronics where efficiency and reliability are crucial.
Pinout
1. Pin 1 - Gate: This is the control pin that modulates the conductivity of the MOSFET. A voltage applied to the gate controls the electrical conductivity between the drain and the source.
2. Pin 2 - Drain: This is the terminal through which the current flows into the transistor when it is in the 'on' state.
3. Pin 3 - Source: This is the terminal through which the current flows out of the transistor when it is in the 'on' state.
These pins function together to control the flow of electrical power in circuits, acting as a switch or amplifier. The FDP027N08B is used in various applications such as DC-DC converters, motor drives, and other power management systems.