FDP075N15A

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FDP075N15A

+БОМ

MOSFET N-CH 150V 130A TO220-3

  • ПроизводительОнсеми

  • Мфр. Часть #FDP075N15A

  • В наличии1852

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Спецификации

Атрибут Ценность
Series PowerTrench®
Part Status Obsolete
Base Product Number FDP075
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7350 pF @ 75 V
Power Dissipation (Max) 333W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Packaging Tube

Обзор

Description

The FDP075N15A is a 75V, 75A N-channel MOSFET from ON Semiconductor, designed for high-efficiency power applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 5.2mΩ (at VGS=10V), reducing conduction losses.
- High Current Handling: Supports up to 75A continuous drain current.
- Fast Switching: Optimized for switching power supplies, motor drives, and DC-DC converters.
- Robust Design: Avalanche-rated for reliability in harsh conditions.
Packaged in a TO-252 (DPAK) for easy mounting, it’s ideal for automotive, industrial, and consumer electronics where efficiency and thermal performance are critical.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the FDP075N15A (150V, 75A N-channel MOSFET) include:
- IRFP4568PbF (150V, 82A)
- STP80NF15 (150V, 80A)
- IXFH82N15X3 (150V, 82A)
- AUIRFPE4215 (150V, 75A)
Check datasheets for exact specs and pin compatibility before substitution.

Features

The FDP075N15A is an N-channel MOSFET with the following key features:
- Voltage Rating: 150V
- Current Rating: 75A (continuous)
- Low On-Resistance (RDS(on)): 7.5 mΩ (max at VGS = 10V)
- Fast Switching: Optimized for high-efficiency power applications
- Avalanche Energy Rated: Enhanced ruggedness
- Package: TO-220 (through-hole mounting)
- Gate Charge (Qg): Low (typ. 63nC) for reduced switching losses
- Applications: Power supplies, motor drives, DC-DC converters
This MOSFET is designed for high-power, high-efficiency switching with robust thermal performance.

Pinout

The FDP075N15A is an N-channel MOSFET with 3 pins (TO-220 package).
Pin Functions:
1. Gate (G): Controls the switching operation (voltage applied here turns the device on/off).
2. Drain (D): Connects to the load (high-voltage/high-current side).
3. Source (S): Ground/reference connection.
Key Specs:
- VDS: 150V
- ID: 75A (continuous)
- RDS(on): 7.5mΩ (max at 10V VGS)
Commonly used in power switching applications (e.g., motor drives, power supplies).

Application

The FDP075N15A, a 150V N-channel MOSFET, is commonly used in:
1. Power Supplies – Switching regulators, DC-DC converters.
2. Motor Control – Drives for brushed/brushless motors.
3. Inverters – Solar, UPS, and industrial inverters.
4. Automotive Systems – Electric vehicle (EV) power management.
5. Industrial Equipment – High-efficiency switching applications.
Its low on-resistance (RDS(on)) and high current handling (75A) make it suitable for high-power, fast-switching circuits.

Package

The FDP075N15A is an N-channel MOSFET in a TO-220 package. This package type is through-hole mounted, offering good thermal performance and ease of heat sinking. It has three leads (gate, drain, source) and is commonly used in power applications. The TO-220 package is robust and suitable for medium to high-power circuits.

Frequently Asked Questions


Q: What is the maximum drain-source voltage this MOSFET can handle?
A: The FDP075N15A has a maximum drain-to-source voltage (Vdss) of 150V, suitable for high-voltage switching applications.


Q: What is the typical on-resistance at 100A drain current?
A: The typical Rds(on) is 7.5mOhm max at Id=100A and Vgs=10V, ensuring low conduction losses for high-current designs.


Q: What is the maximum continuous drain current rating at 25°C?
A: It can handle a continuous drain current (Id) of up to 130A at 25°C case temperature, ideal for power supply and motor control.


Q: What gate charge is required for switching at 10V?
A: The total gate charge (Qg) is 100nC max at Vgs=10V, which impacts switching speed and driver requirements.


Q: What is the power dissipation capability of this device?
A: Maximum power dissipation (Pd) is 333W at Tc=25°C, requiring adequate heatsinking for high-power operation.


Q: What is the operating temperature range for this MOSFET?
A: The junction temperature range is -55°C to +175°C, suitable for demanding industrial and automotive environments.


Q: Is this component through-hole or surface-mount?
A: It uses a through-hole TO-220-3 package, designed for traditional PCB mounting with good thermal performance.


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