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FDS8884
+БОМMOSFET N-CH 30V 8.5A 8SOIC
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ПроизводительОнсеми
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Мфр. Часть #FDS8884
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Лист данных FDS8884 DataSheet
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В наличии5158
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 8.5A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 23mOhm @ 8.5A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 13 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 635 pF @ 15 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
Обзор
Description
The FDS8884 is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplification purposes. It is part of ON Semiconductor's product lineup and is designed to offer high efficiency and performance in a compact package. The FDS8884 typically features low on-resistance and fast switching speeds, making it suitable for applications such as DC-DC converters, power management systems, and motor drives.
Key specifications often include a drain-source voltage (V_DS) rating of around 30V and continuous drain current (I_D) of up to several amperes, depending on the specific variant. The device is typically housed in a small, surface-mount package, such as a SO-8, enabling easy integration into printed circuit boards.
Engineers choose the FDS8884 for its ability to handle significant power loads while minimizing energy loss and heat generation, thus enhancing overall system efficiency. Its dual N-channel configuration allows for versatile circuit designs, offering solutions for both high-side and low-side switching applications.
Key specifications often include a drain-source voltage (V_DS) rating of around 30V and continuous drain current (I_D) of up to several amperes, depending on the specific variant. The device is typically housed in a small, surface-mount package, such as a SO-8, enabling easy integration into printed circuit boards.
Engineers choose the FDS8884 for its ability to handle significant power loads while minimizing energy loss and heat generation, thus enhancing overall system efficiency. Its dual N-channel configuration allows for versatile circuit designs, offering solutions for both high-side and low-side switching applications.
Equivalent
The FDS8884 is a dual N-channel MOSFET. Equivalent products include:
1. NXP BFU730F - Similar dual N-channel MOSFET with comparable specifications.
2. ON Semiconductor NTD3055 - Offers similar performance, though it might differ in package or ratings.
3. Vishay Si4946EY - Another dual N-channel MOSFET that aligns closely in functionality.
4. Infineon BSC026N02LS - Provides similar electrical characteristics.
Always verify the specifications and pin configurations to ensure compatibility with your specific application.
1. NXP BFU730F - Similar dual N-channel MOSFET with comparable specifications.
2. ON Semiconductor NTD3055 - Offers similar performance, though it might differ in package or ratings.
3. Vishay Si4946EY - Another dual N-channel MOSFET that aligns closely in functionality.
4. Infineon BSC026N02LS - Provides similar electrical characteristics.
Always verify the specifications and pin configurations to ensure compatibility with your specific application.
Features
The FDS8884 is a dual N-channel MOSFET designed for various electronic applications. Here are its key features:
1. Dual N-Channel: It contains two N-channel MOSFETs in a single package, optimizing space and efficiency.
2. Voltage Rating: Typically rated for a maximum drain-source voltage (V_DS) of around 30V, suitable for low to medium voltage applications.
3. Current Handling: It can handle a continuous drain current (I_D) of approximately 8A to 10A, depending on specific conditions.
4. Low On-Resistance: Exhibits low R_DS(on), reducing power loss and enhancing efficiency in switching applications.
5. Fast Switching: Designed for fast switching speeds, making it suitable for high-frequency applications.
6. Compact Package: Available in a small package (such as SO-8), aiding in space-saving designs.
7. Thermal Performance: Enhanced thermal performance for better heat dissipation.
8. Applications: Commonly used in DC-DC converters, motor drivers, load switches, and other power management systems.
These features make the FDS8884 a versatile choice for designers looking for efficient and compact MOSFET solutions.
1. Dual N-Channel: It contains two N-channel MOSFETs in a single package, optimizing space and efficiency.
2. Voltage Rating: Typically rated for a maximum drain-source voltage (V_DS) of around 30V, suitable for low to medium voltage applications.
3. Current Handling: It can handle a continuous drain current (I_D) of approximately 8A to 10A, depending on specific conditions.
4. Low On-Resistance: Exhibits low R_DS(on), reducing power loss and enhancing efficiency in switching applications.
5. Fast Switching: Designed for fast switching speeds, making it suitable for high-frequency applications.
6. Compact Package: Available in a small package (such as SO-8), aiding in space-saving designs.
7. Thermal Performance: Enhanced thermal performance for better heat dissipation.
8. Applications: Commonly used in DC-DC converters, motor drivers, load switches, and other power management systems.
These features make the FDS8884 a versatile choice for designers looking for efficient and compact MOSFET solutions.
Pinout
The FDS8884 is a dual N-channel MOSFET, typically used in applications like power management and load switching. It is commonly packaged in an SO-8 (Small Outline) package, which has 8 pins. The specific functions of these pins are as follows:
1. Pin 1 (Source 1 - S1): Connects to the source of the first MOSFET.
2. Pin 2 (Gate 1 - G1): Connects to the gate of the first MOSFET.
3. Pin 3 (Source 2 - S2): Connects to the source of the second MOSFET.
4. Pin 4 (Gate 2 - G2): Connects to the gate of the second MOSFET.
5. Pin 5 (Drain 2 - D2): Connects to the drain of the second MOSFET.
6. Pin 6 (Drain 2 - D2): Also connects to the drain of the second MOSFET (connected internally to Pin 5).
7. Pin 7 (Drain 1 - D1): Connects to the drain of the first MOSFET.
8. Pin 8 (Drain 1 - D1): Also connects to the drain of the first MOSFET (connected internally to Pin 7).
These dual MOSFETs are often used to enhance efficiency and performance in compact, high-density electronic systems.
1. Pin 1 (Source 1 - S1): Connects to the source of the first MOSFET.
2. Pin 2 (Gate 1 - G1): Connects to the gate of the first MOSFET.
3. Pin 3 (Source 2 - S2): Connects to the source of the second MOSFET.
4. Pin 4 (Gate 2 - G2): Connects to the gate of the second MOSFET.
5. Pin 5 (Drain 2 - D2): Connects to the drain of the second MOSFET.
6. Pin 6 (Drain 2 - D2): Also connects to the drain of the second MOSFET (connected internally to Pin 5).
7. Pin 7 (Drain 1 - D1): Connects to the drain of the first MOSFET.
8. Pin 8 (Drain 1 - D1): Also connects to the drain of the first MOSFET (connected internally to Pin 7).
These dual MOSFETs are often used to enhance efficiency and performance in compact, high-density electronic systems.
Manufacturer
The FDS8884 is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a leading semiconductor company that designs and manufactures a wide range of semiconductor components and solutions. The company focuses on power and signal management, logic, discrete, and custom devices for various industries, including automotive, industrial, communications, computing, and consumer electronics. Onsemi's products are used in applications such as energy-efficient power supplies, smart sensing, LED lighting, and advanced safety systems. With a commitment to innovation and sustainability, onsemi aims to provide solutions that address energy efficiency and enable smart technology across different sectors.
Application
The FDS8884 is a dual N-channel MOSFET designed for various applications. Its primary uses include power management in DC-DC converters, motor control, and load switching in consumer electronics. Due to its low on-resistance and high efficiency, it is suitable for battery-powered devices, where power conservation is critical. Additionally, it can be utilized in telecom equipment, industrial automation systems, and automotive electronics for power distribution and control. The device's compact package makes it ideal for applications requiring space-saving solutions without compromising performance.
Package
The FDS8884 is typically available in a PowerTrench® MOSFET package, specifically the SuperSOT™-8 package. This package offers efficient thermal performance and is compact, making it suitable for space-constrained applications in power management.
