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FF450R12ME4
+БОМINSULATED GATE BIPOLAR TRANSISTO
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Производителькомпанией Infineon Technologies
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Мфр. Часть #FF450R12ME4
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Лист данных FF450R12ME4 DataSheet
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Пакет Module
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В наличии5683
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package | Bulk |
| ProductStatus | Active |
| IGBTType | Trench Field Stop |
| Configuration | Half Bridge Inverter |
| Voltage-CollectorEmitterBreakdown(Max) | 1200 V |
| Current-Collector(Ic)(Max) | 450 A |
| Power-Max | 0.02 W |
| Vce(on)(Max)@VgeIc | 2.1V @ 15V, 450A |
| Current-CollectorCutoff(Max) | 3 mA |
| InputCapacitance(Cies)@Vce | 28 nF @ 25 V |
| Input | Standard |
| NTCThermistor | Yes |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Chassis Mount |
| Package/Case | Module |
Обзор
Description
Key features of the FF450R12ME4 include low switching losses and high thermal performance, attributed to its advanced trench and field-stop technology. It integrates a free-wheeling diode for each IGBT, enhancing its efficiency and reducing power dissipation. The module's compact design and standardized package facilitate easy integration and maintenance in power electronic systems.
Overall, the FF450R12ME4 provides a balance of efficiency, performance, and durability, making it a popular choice for applications requiring robust and efficient power management solutions.
Equivalent
1. IXYS: IXFN450N12T (similar ratings)
2. Mitsubishi: CM450DU-12NF
3. Fuji Electric: 2MBI450U4A-120
4. Semikron: SKM400GB12V
These alternatives offer comparable voltage and current ratings, but exact equivalency should be verified based on specific application requirements and datasheet comparisons.
Features
1. Voltage and Current Ratings: It has a collector-emitter voltage (V_CE) rating of 1200V and a collector current (I_C) rating of 450A, making it suitable for high-power applications.
2. IGBT Technology: Utilizes Insulated Gate Bipolar Transistor (IGBT) technology, combining high efficiency and fast switching.
3. Low Losses: Designed for low conduction and switching losses, enhancing energy efficiency.
4. Robust Design: Features a robust mechanical design for reliable operation under various environmental conditions.
5. Temperature Monitoring: Equipped with a built-in temperature sensor for precise thermal management.
6. Compatibility: Offers a standard industrial footprint for compatibility with existing systems.
7. Protection Features: Includes short-circuit ruggedness and overcurrent protection for operational safety.
8. Applications: Commonly used in motor drives, renewable energy systems, and industrial power supplies.
These features make the FF450R12ME4 a versatile choice for high-power, high-efficiency applications in challenging industrial environments.
Pinout
The FF450R12ME4 features a 62mm package with a pin count of 24. The pins are used for various functions including the main terminals for the collector and emitter, auxiliary connections for the gate drivers, and additional terminals for the temperature sensor or other auxiliary purposes. The module provides a maximum collector-emitter voltage (V_CE) of 1200V and a continuous collector current rating (I_C) of 450A.
This IGBT module is suitable for applications like motor drives, renewable energy systems, and other industrial power electronics. It offers benefits such as efficient thermal management, low power losses, and high reliability under demanding conditions.