FGA40T65SHD

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FGA40T65SHD

+БОМ

IGBT TRENCH/FS 650V 80A TO3PN

  • ПроизводительОнсеми

  • Мфр. Часть #FGA40T65SHD

  • Пакет TO-3PN

  • В наличии5595

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Package Bulk,Tube
ProductStatus Active
IGBTType Trench Field Stop
Voltage-CollectorEmitterBreakdown(Max) 650 V
Current-Collector(Ic)(Max) 80 A
Current-CollectorPulsed(Icm) 120 A
Vce(on)(Max)@VgeIc 2.1V @ 15V, 40A
Power-Max 268 W
SwitchingEnergy 1.01mJ (on), 297µJ (off)
InputType Standard
GateCharge 72.2 nC
Td(on/off)@25°C 19.2ns/65.6ns
TestCondition 400V, 40A, 6Ohm, 15V
ReverseRecoveryTime(trr) 31.8 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-3P-3, SC-65-3

Обзор

Description

The FGA40T65SHD is a field-stop trench Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. It is part of ON Semiconductor's FG-series, tailored for applications requiring high-speed switching and low conduction losses. This IGBT is rated for 650 volts and 40 amperes, making it suitable for use in various industrial and consumer electronics where efficient power management is critical.
Key features of the FGA40T65SHD include a low VCE(sat) for minimal conduction loss, optimized for fast switching to reduce dynamic losses, and a robust field-stop trench design that provides high reliability and performance. It also offers a short-circuit withstand time, enhancing its reliability in fault conditions.
Typical applications of the FGA40T65SHD include motor drives, inverters, uninterruptible power supplies (UPS), and other power conversion systems. Its compact design and high efficiency make it an ideal choice for engineers looking to minimize system size while maximizing power output and operational efficiency.

Equivalent

The FGA40T65SHD is a 650V, 40A IGBT. Equivalent products include:
1. STMicroelectronics STGW40H65DFB - 650V, 40A IGBT.
2. Infineon Technologies IKW40N65H5 - 650V, 40A IGBT.
3. ON Semiconductor FGH40T65UFD - 650V, 40A IGBT.
4. Rohm RGT40TS65D - 650V, 40A IGBT.
These alternatives generally share similar voltage and current ratings, suitable for high-speed switching applications. Always verify compatibility with your specific application requirements.

Features

The FGA40T65SHD is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed primarily for industrial and high-power applications. Key features include:
1. High Efficiency: Offers low saturation voltage and minimal switching losses, ensuring better efficiency.
2. Fast Switching: Designed for high-speed operations, making it suitable for applications that require rapid switching.
3. Rugged Build: Robust construction provides durability and reliability under heavy loads and harsh conditions.
4. High Current Handling: Capable of managing significant current levels, making it ideal for demanding applications.
5. Thermal Performance: Excellent thermal characteristics with efficient heat dissipation, enhancing device longevity.
6. Low EMI: Reduced electromagnetic interference, providing cleaner and more stable operation.
7. Versatility: Suitable for use in various applications, including motor drives, power supplies, and other industrial equipment.
Overall, the FGA40T65SHD combines efficiency, speed, and durability, making it a reliable choice for high-power electronic applications.

Pinout

The FGA40T65SHD is an Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications. It typically comes in a TO-247 package, which generally has three pins:
1. Collector (C): This is the power input terminal. The collector accepts current from the power supply and is the main terminal through which the IGBT receives voltage.
2. Gate (G): The gate terminal controls the IGBT's switching operation. A voltage applied to the gate switches the device on, allowing current to flow between the collector and emitter.
3. Emitter (E): This is the power output terminal. The emitter is where current exits the IGBT to the load once the device is switched on via the gate.
The FGA40T65SHD is designed for high efficiency and fast switching, making it suitable for applications like power inverters, motor drives, and other power electronic circuits.

Manufacturer

The FGA40T65SHD is manufactured by ON Semiconductor, which is now known as onsemi. onsemi is a multinational company that specializes in semiconductor manufacturing. They design and produce a wide range of semiconductor components used in various applications, including automotive, industrial, consumer electronics, communications, and computing. The company focuses on developing energy-efficient solutions, and their product portfolio includes power and signal management, logic, discrete, and custom devices.

Application

The FGA40T65SHD is an IGBT (Insulated Gate Bipolar Transistor) designed for high-efficiency power applications. It is commonly used in:
1. Motor Drives: Helps in efficient motor control and operation in industrial and consumer applications.
2. Inverters: Key component in converting DC to AC, especially in solar inverters and UPS systems.
3. Power Supplies: Used in Switch Mode Power Supplies (SMPS) for improved energy efficiency.
4. Welding Equipment: Offers precise control for electrical welding systems.
5. Induction Heating: Facilitates efficient energy transfer for heating processes.
These applications benefit from its fast switching, low conduction loss, and robust performance.

Package

The FGA40T65SHD is an IGBT (Insulated Gate Bipolar Transistor) module. It typically comes in a TO-247 package, which is a through-hole type designed for power semiconductor devices, providing a good balance of thermal and electrical performance suitable for high-power applications.

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