FQA24N50

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FQA24N50

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MOSFET N-CH 500V 24A TO3P

  • ПроизводительОнсеми

  • Мфр. Часть #FQA24N50

  • В наличии7736

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Спецификации

Атрибут Ценность
Series QFET®
Part Status Obsolete
Base Product Number FQA2
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 25 V
Power Dissipation (Max) 290W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package TO-3P-3, SC-65-3
Packaging Tube

Обзор

Equivalent

Equivalent products to the FQA24N50 (500V, 24A N-channel MOSFET) include:
- IRFP450 (500V, 14A)
- STP20NM50FD (500V, 20A)
- IXFH24N50P (500V, 24A)
- FQP27N25 (250V, 27A, lower voltage)
Check datasheets for exact specs and pin compatibility.

Features

The FQA24N50 is a 500V N-channel MOSFET with the following key features:
- Voltage Rating: 500V drain-to-source (VDSS)
- Current Rating: 24A continuous drain current (ID)
- Low On-Resistance: Typically 0.23Ω (RDS(on)) at VGS = 10V
- Fast Switching: Low gate charge (Qg) and input capacitance for efficient switching
- Avalanche Energy Rated: Robust against inductive load spikes
- Package: TO-3P (low thermal resistance for better heat dissipation)
- Applications: Power supplies, motor drives, inverters, and high-voltage switching circuits
Designed for high efficiency and reliability in power electronics.

Pinout

The FQA24N50 is a 500V, 24A N-channel MOSFET in a TO-3PN (TO-247) package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Ground/reference terminal.
Key features:
- Low on-resistance (RDS(on)) for efficient power handling.
- Fast switching for power supply and motor control applications.
- Avalanche energy rated for robustness.
Common uses:
- Switching power supplies
- DC-DC converters
- Motor drives

Manufacturer

The FQA24N50 is a 500V, 24A N-channel MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor after its acquisition in 2016).
Fairchild Semiconductor was a pioneering American semiconductor company founded in 1957, known for innovations in power management and analog solutions. ON Semiconductor is a global leader in energy-efficient technologies, specializing in power and signal management, sensors, and connectivity solutions.
The FQA24N50 is designed for high-power applications like switching power supplies and motor control.

Application

The FQA24N50 is a 500V, 24A N-channel MOSFET commonly used in:
1. Power Supplies – Switched-mode power supplies (SMPS), inverters, and converters.
2. Motor Control – Drives for brushed/brushless DC motors.
3. Lighting Systems – LED drivers and ballasts.
4. Industrial Equipment – High-power switching applications.
5. Renewable Energy – Solar inverters and charge controllers.
Its high voltage and current ratings make it suitable for efficient power switching in demanding environments.

Package

The FQA24N50 is a 500V, 24A N-channel MOSFET typically available in a TO-3PN (TO-247) package. This package type offers robust thermal performance and is commonly used for high-power applications. It features three leads (gate, drain, source) and is designed for efficient heat dissipation.

Frequently Asked Questions


Q: What is the maximum drain-source voltage (Vdss) of the FQA24N50?
A: The FQA24N50 has a maximum drain-source voltage rating of 500 V, making it suitable for high-voltage switching applications.


Q: What is the continuous drain current rating at 25°C?
A: At a case temperature of 25°C, the continuous drain current (Id) is rated at 24 A.


Q: What is the typical on-resistance (Rds(on)) for this MOSFET?
A: The maximum on-resistance is 200 mOhm at a drain current of 12 A and gate-source voltage of 10 V.


Q: What is the maximum gate charge (Qg) value?
A: The maximum total gate charge is 120 nC at a gate-source voltage of 10 V, which influences switching speed and drive requirements.


Q: What is the maximum power dissipation of this device?
A: The maximum power dissipation is 290 W at case temperature (Tc), ensuring robust thermal performance in high-power designs.


Q: What package type does the FQA24N50 use?
A: It uses a through-hole TO-3P package (TO-3P-3, SC-65-3), which offers excellent heat dissipation for power applications.


Q: Is this component suitable for switching power supplies?
A: Yes, with a 500 V drain-source breakdown voltage and 24 A current rating, it is ideal for high-voltage switching power supplies and inverters.


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