FQD9N25TM

Изображения являются только для ссылки

FQD9N25TM

+БОМ

MOSFET N-CH 250V 7.4A DPAK

  • ПроизводительОнсеми

  • Мфр. Часть #FQD9N25TM

  • Лист данных FQD9N25TM DataSheet

  • В наличии5120

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Series QFET®
Part Status Obsolete
Base Product Number FQD9N25
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 420mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 55W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging Tape & Reel (TR)

Обзор

Description

The FQD9N25TM is a specific type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. This device is part of Fairchild Semiconductor's lineup, known for its efficiency and reliability in power management. The FQD9N25TM typically features a high voltage rating, making it suitable for use in high-speed switching applications such as power supplies, DC-DC converters, and motor control circuits.
Key characteristics of the FQD9N25TM include low on-resistance, which minimizes power loss and heat generation, and fast switching speeds, enhancing overall circuit efficiency. This MOSFET is usually housed in a TO-252 package, allowing for easy integration into printed circuit boards with efficient thermal management.
The device is also known for its robustness, withstanding high current and voltage stresses, thus ensuring a long operational lifespan. Its compact size and effective performance make it suitable for compact and energy-efficient designs. Overall, the FQD9N25TM is widely used in automotive, industrial, and consumer electronics for effective power control and management.

Equivalent

The FQD9N25TM is an N-channel MOSFET. Equivalent products that are similar in function and specifications might include the IRF530, STP20NF10, and NTD4906N-35G. When selecting an equivalent, ensure that parameters such as voltage rating, current capacity, and on-resistance match your requirements. Always refer to the datasheets for precise comparisons.

Features

The FQD9N25TM is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used for switching and amplifying electronic signals in a variety of applications. Here are some of its key features:
1. Voltage and Current Ratings: It typically has a drain-source voltage (V_DS) rating of 250V and a continuous drain current (I_D) rating of about 9A, making it suitable for medium to high-power applications.
2. Low On-Resistance: The FQD9N25TM offers low on-resistance (R_DS(on)), which results in lower power losses and increased efficiency during operation.
3. Fast Switching Speed: It is designed to handle rapid switching, which is crucial for efficient power management in circuits.
4. Temperature Range: This MOSFET can operate over a wide temperature range, often from -55°C to 150°C, allowing it to be used in various environmental conditions.
5. Package Type: It is commonly available in TO-252 (DPAK) package, which provides good thermal performance and is suitable for surface-mount technology (SMT).
6. Applications: The FQD9N25TM is typically used in power supply circuits, motor control, and other power management systems.

Pinout

The FQD9N25TM is a N-channel MOSFET. It typically comes in a TO-252 package, which usually has 3 pins. Here's a brief overview of its pin functions:
1. Gate (G): This is the terminal that controls the MOSFET. By applying a voltage to the gate, you can control the flow of current between the drain and source.
2. Drain (D): This is the terminal through which current flows from the drain to the source when the MOSFET is on.
3. Source (S): This is the terminal through which current flows out of the MOSFET.
The FQD9N25TM is used in applications requiring high-speed switching and enhanced efficiency, thanks to its low on-resistance and fast switching characteristics.

Manufacturer

The FQD9N25TM is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is an American semiconductor supplier company that develops energy-efficient innovations. It provides a comprehensive portfolio of solutions for a wide range of applications including automotive, industrial, cloud power, IoT, and 5G. The company's products include power and signal management, logic, discrete, and custom devices. ON Semiconductor focuses on driving energy-efficient solutions to reduce global energy use and support sustainable development.

Application

The FQD9N25TM is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with N-channel enhancement mode, typically used in applications requiring efficient power management. It is suitable for switching applications, such as DC-DC converters, motor drivers, and power supplies. Its characteristics make it ideal for use in high-speed switching and low-voltage applications. Additionally, it can be used in various consumer electronics, automotive systems, and industrial equipment where efficient power control is crucial. Its ability to handle significant power levels while maintaining fast switching speeds makes it a versatile component in modern electronic designs.

Package

The FQD9N25TM is a MOSFET transistor, and it typically comes in a TO-252 package type, also known as DPAK. This package is designed for surface mounting on circuit boards and offers good thermal performance and reliability.

Продукты, связанные с FQD9N25TM