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FQD9N25TM
+БОМMOSFET N-CH 250V 7.4A DPAK
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ПроизводительОнсеми
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Мфр. Часть #FQD9N25TM
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Лист данных FQD9N25TM DataSheet
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В наличии5120
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Series | QFET® |
| Part Status | Obsolete |
| Base Product Number | FQD9N25 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250 V |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 3.7A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta), 55W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Packaging | Tape & Reel (TR) |
Обзор
Description
Key characteristics of the FQD9N25TM include low on-resistance, which minimizes power loss and heat generation, and fast switching speeds, enhancing overall circuit efficiency. This MOSFET is usually housed in a TO-252 package, allowing for easy integration into printed circuit boards with efficient thermal management.
The device is also known for its robustness, withstanding high current and voltage stresses, thus ensuring a long operational lifespan. Its compact size and effective performance make it suitable for compact and energy-efficient designs. Overall, the FQD9N25TM is widely used in automotive, industrial, and consumer electronics for effective power control and management.
Equivalent
Features
1. Voltage and Current Ratings: It typically has a drain-source voltage (V_DS) rating of 250V and a continuous drain current (I_D) rating of about 9A, making it suitable for medium to high-power applications.
2. Low On-Resistance: The FQD9N25TM offers low on-resistance (R_DS(on)), which results in lower power losses and increased efficiency during operation.
3. Fast Switching Speed: It is designed to handle rapid switching, which is crucial for efficient power management in circuits.
4. Temperature Range: This MOSFET can operate over a wide temperature range, often from -55°C to 150°C, allowing it to be used in various environmental conditions.
5. Package Type: It is commonly available in TO-252 (DPAK) package, which provides good thermal performance and is suitable for surface-mount technology (SMT).
6. Applications: The FQD9N25TM is typically used in power supply circuits, motor control, and other power management systems.
Pinout
1. Gate (G): This is the terminal that controls the MOSFET. By applying a voltage to the gate, you can control the flow of current between the drain and source.
2. Drain (D): This is the terminal through which current flows from the drain to the source when the MOSFET is on.
3. Source (S): This is the terminal through which current flows out of the MOSFET.
The FQD9N25TM is used in applications requiring high-speed switching and enhanced efficiency, thanks to its low on-resistance and fast switching characteristics.