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IPA60R099C6
+БОМ-
Производителькомпанией Infineon Technologies
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Мфр. Часть #IPA60R099C6
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Лист данных IPA60R099C6 DataSheet
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В наличии3823
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity | 500 |
| Technology | Si |
| Shipping Restrictions | Mouser does not presently sell this product in your region. |
| Mounting Type | Through Hole |
| Package / Case | TO-220FP-3 |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 600 V |
| Id - Continuous Drain Current | 37.9 A |
| Rds On | 90 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 119 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 35 W |
| Channel Mode | Enhancement |
| Tradename | CoolMOS |
| Configuration | Single |
| Fall Time | 6 ns |
| Height | 16.15 mm |
| Length | 10.65 mm |
| Rise Time | 12 ns |
| Series | CoolMOS C6 |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 75 ns |
| Typical Turn - On Delay Time | 15 ns |
| Width | 4.85 mm |
| Part # Aliases | SP000658000 IPA6R99C6XK IPA60R099C6XKSA1 |
| Unit Weight | 0.068784 oz |
| Type | 600 V CoolMOS C6 Power Transistor |
Обзор
Description
The IPA60R099C6 is a high-performance N-channel MOSFET manufactured by Infineon Technologies, designed for power switching applications. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 60A, making it suitable for various high-voltage applications. The device has a low on-resistance (R_DS(on)) of approximately 99 mΩ, which enhances efficiency by reducing power losses during operation.
Key characteristics include a fast switching capability, which is beneficial for applications such as switch-mode power supplies (SMPS), motor drives, and renewable energy systems like solar inverters. The device is packaged in a TO-247 format, facilitating effective thermal management.
With its robust performance and reliability, the IPA60R099C6 is ideal for applications that require efficient power handling and heat dissipation. Overall, it is a valuable component for engineers looking to design efficient and powerful electronic systems.
Key characteristics include a fast switching capability, which is beneficial for applications such as switch-mode power supplies (SMPS), motor drives, and renewable energy systems like solar inverters. The device is packaged in a TO-247 format, facilitating effective thermal management.
With its robust performance and reliability, the IPA60R099C6 is ideal for applications that require efficient power handling and heat dissipation. Overall, it is a valuable component for engineers looking to design efficient and powerful electronic systems.
Equivalent
The IPA60R099C6 is a 600V, 99A N-channel IGBT from Infineon. Equivalent products can include:
1. IXGH40N60 - IXYS
2. FGA60N60 - Fairchild
3. BP100N60 - STMicroelectronics
4. MGF30N60 - Magnachip
Always verify specifications such as voltage, current rating, and package type to ensure compatibility.
1. IXGH40N60 - IXYS
2. FGA60N60 - Fairchild
3. BP100N60 - STMicroelectronics
4. MGF30N60 - Magnachip
Always verify specifications such as voltage, current rating, and package type to ensure compatibility.
Features
The IPA60R099C6 is an N-channel MOSFET from Infineon, designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. On-Resistance: The device boasts a low on-resistance (Rds(on)) of approximately 0.099 Ohms, which helps minimize conduction losses.
3. Current Rating: It can handle continuous drain current (Id) of up to 60A at a specified temperature.
4. Fast Switching: Designed for fast switching applications, it supports high-frequency operation, enhancing efficiency in switching power supplies.
5. Robust Thermal Performance: It features a high thermal resistance, enabling effective heat dissipation during operation.
6. Package Type: The MOSFET is typically available in a TO-247 package, allowing for easy mounting and good thermal management.
These features make the IPA60R099C6 suitable for applications such as power supplies, motor drives, and automotive systems.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. On-Resistance: The device boasts a low on-resistance (Rds(on)) of approximately 0.099 Ohms, which helps minimize conduction losses.
3. Current Rating: It can handle continuous drain current (Id) of up to 60A at a specified temperature.
4. Fast Switching: Designed for fast switching applications, it supports high-frequency operation, enhancing efficiency in switching power supplies.
5. Robust Thermal Performance: It features a high thermal resistance, enabling effective heat dissipation during operation.
6. Package Type: The MOSFET is typically available in a TO-247 package, allowing for easy mounting and good thermal management.
These features make the IPA60R099C6 suitable for applications such as power supplies, motor drives, and automotive systems.
Pinout
The IPA60R099C6 is an N-channel MOSFET from Infineon Technologies, featuring a pin count of 4. This MOSFET is designed for high-efficiency applications and is commonly used in power electronics, including switching power supplies and motor drives.
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching action.
2. Drain (D): The main current-carrying terminal; connects to the load.
3. Source (S): The terminal through which the current exits the MOSFET to ground or common reference.
The IPA60R099C6 is characterized by its low on-resistance, high breakdown voltage, and low gate charge, making it suitable for various power management applications. Its maximum voltage rating is 600V, and it can handle continuous drain currents up to 27A, providing versatility in high-performance circuits.
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching action.
2. Drain (D): The main current-carrying terminal; connects to the load.
3. Source (S): The terminal through which the current exits the MOSFET to ground or common reference.
The IPA60R099C6 is characterized by its low on-resistance, high breakdown voltage, and low gate charge, making it suitable for various power management applications. Its maximum voltage rating is 600V, and it can handle continuous drain currents up to 27A, providing versatility in high-performance circuits.
Manufacturer
The IPA60R099C6 is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in providing semiconductor and system solutions for various applications, including automotive, industrial, communication, and consumer electronics.
Infineon is known for its innovation in power semiconductors, microcontrollers, and sensors, offering products that enhance energy efficiency, security, and connectivity. The IPA60R099C6 is a silicon carbide (SiC) MOSFET, which is part of Infineon's portfolio aimed at high-performance applications requiring efficient power management.
The company plays a significant role in the semiconductor industry, focusing on sustainability and technological advancement, and serves a wide array of sectors, making it a vital player in the global electronics market.
Infineon is known for its innovation in power semiconductors, microcontrollers, and sensors, offering products that enhance energy efficiency, security, and connectivity. The IPA60R099C6 is a silicon carbide (SiC) MOSFET, which is part of Infineon's portfolio aimed at high-performance applications requiring efficient power management.
The company plays a significant role in the semiconductor industry, focusing on sustainability and technological advancement, and serves a wide array of sectors, making it a vital player in the global electronics market.
Application
The IPA60R099C6 is a 600V, 99A N-channel IGBT transistor designed for high-efficiency power applications. Its primary application areas include:
1. Industrial Drives: Used in motor control and drive systems for various machinery.
2. Renewable Energy Systems: Employed in solar inverters and wind turbine converters.
3. Power Supplies: Utilized in switch-mode power supplies (SMPS) for efficient energy conversion.
4. Electric Vehicles: Supports traction systems and battery management.
5. HVAC Systems: Applied in variable frequency drives for HVAC equipment.
Overall, it is used in applications requiring high power handling and efficiency.
1. Industrial Drives: Used in motor control and drive systems for various machinery.
2. Renewable Energy Systems: Employed in solar inverters and wind turbine converters.
3. Power Supplies: Utilized in switch-mode power supplies (SMPS) for efficient energy conversion.
4. Electric Vehicles: Supports traction systems and battery management.
5. HVAC Systems: Applied in variable frequency drives for HVAC equipment.
Overall, it is used in applications requiring high power handling and efficiency.
Package
The IPA60R099C6 is packaged in a TO-247 format. This package type is designed for high-power applications, offering effective thermal management and ease of mounting.
