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IPD100N04S402ATMA1
+БОМMOSFET N-CH 40V 100A TO252-3
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IPD100N04S402ATMA1
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Лист данных IPD100N04S402ATMA1 DataSheet
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Спецификации
| Атрибут | Ценность |
| Series | OptiMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 95µA |
| Gate Charge (Qg) (Max) @ Vgs | 118 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 9430 pF @ 25 V |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3-313 |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | IPD100 |
Обзор
Description
The IPD100N04S402ATMA1 is a high-performance N-channel power MOSFET designed for various applications, including power management, DC-DC converters, and motor control. It features a low on-resistance, enabling efficient conduction with minimal power loss. The device has a maximum continuous drain current rating of 100A and a breakdown voltage of 40V, making it suitable for high-current applications.
This MOSFET is packaged in a TO-220 format, providing excellent thermal performance and ease of mounting. Its fast switching capabilities reduce switching losses, which is crucial for high-frequency applications. The IPD100N04S402ATMA1 is also characterized by a low gate charge, enhancing its suitability for high-efficiency designs.
Overall, this MOSFET is an excellent choice for engineers looking for reliable, efficient components in power electronics. Always consult the manufacturer's datasheet for detailed specifications and application guidelines.
This MOSFET is packaged in a TO-220 format, providing excellent thermal performance and ease of mounting. Its fast switching capabilities reduce switching losses, which is crucial for high-frequency applications. The IPD100N04S402ATMA1 is also characterized by a low gate charge, enhancing its suitability for high-efficiency designs.
Overall, this MOSFET is an excellent choice for engineers looking for reliable, efficient components in power electronics. Always consult the manufacturer's datasheet for detailed specifications and application guidelines.
Equivalent
The IPD100N04S402ATMA1 is a N-channel MOSFET with an on-resistance of 4.0 mΩ and a voltage rating of 40V. Equivalent products include the IRF3205, STP160NF06, and BSC025N04LSG. Ensure to check specifications like RDS(on), VDS, and package type for compatibility. Always consult datasheets for detailed comparisons.
Features
The IPD100N04S402ATMA1 is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, suitable for various power applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of up to 100A, providing robust performance.
3. Low R_DS(on): With a low on-resistance (R_DS(on)), typically around 4mΩ, it minimizes conduction losses, enhancing efficiency.
4. Fast Switching: Designed for fast switching capabilities, making it ideal for high-frequency applications.
5. Thermal Performance: It has a high maximum junction temperature (T_j) rating, improving reliability under thermal stress.
6. Package Type: Housed in a TO-220 package, offering good thermal dissipation and ease of mounting.
These features make the IPD100N04S402ATMA1 suitable for applications in power supplies, motor drivers, and other high-current switching environments.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, suitable for various power applications.
2. Current Rating: Capable of handling a continuous drain current (I_D) of up to 100A, providing robust performance.
3. Low R_DS(on): With a low on-resistance (R_DS(on)), typically around 4mΩ, it minimizes conduction losses, enhancing efficiency.
4. Fast Switching: Designed for fast switching capabilities, making it ideal for high-frequency applications.
5. Thermal Performance: It has a high maximum junction temperature (T_j) rating, improving reliability under thermal stress.
6. Package Type: Housed in a TO-220 package, offering good thermal dissipation and ease of mounting.
These features make the IPD100N04S402ATMA1 suitable for applications in power supplies, motor drivers, and other high-current switching environments.
Pinout
The IPD100N04S402ATMA1 is an N-channel MOSFET designed for power applications. It features a total of 5 pins. The pinout typically includes:
1. Gate (G) - This pin controls the switching of the MOSFET.
2. Drain (D) - This pin is connected to the load; it carries the current when the MOSFET is on.
3. Source (S) - This pin is connected to ground in common applications.
The MOSFET is designed for high efficiency, with a low on-resistance and a high voltage rating, making it suitable for various applications such as power management and motor control. The device can handle a maximum continuous drain current of 100A and operates with a maximum V_DS of 40V.
1. Gate (G) - This pin controls the switching of the MOSFET.
2. Drain (D) - This pin is connected to the load; it carries the current when the MOSFET is on.
3. Source (S) - This pin is connected to ground in common applications.
The MOSFET is designed for high efficiency, with a low on-resistance and a high voltage rating, making it suitable for various applications such as power management and motor control. The device can handle a maximum continuous drain current of 100A and operates with a maximum V_DS of 40V.
Manufacturer
The manufacturer of the IPD100N04S402ATMA1 is Infineon Technologies AG. Infineon is a global semiconductor company based in Germany, specializing in the development and production of a wide range of semiconductor solutions. Their product portfolio includes power semiconductors, microcontrollers, sensors, and automotive solutions, among others.
Infineon serves various industries, including automotive, industrial, and consumer electronics, and is known for its focus on energy efficiency and high-performance products. The IPD100N04S402ATMA1 is a power MOSFET, which is commonly used in applications requiring efficient power management, such as in power supplies and motor control systems. Infineon is recognized for its innovation and commitment to advancing technology in the semiconductor sector.
Infineon serves various industries, including automotive, industrial, and consumer electronics, and is known for its focus on energy efficiency and high-performance products. The IPD100N04S402ATMA1 is a power MOSFET, which is commonly used in applications requiring efficient power management, such as in power supplies and motor control systems. Infineon is recognized for its innovation and commitment to advancing technology in the semiconductor sector.
Application
The IPD100N04S402ATMA1 is an N-channel MOSFET primarily used in power management applications. Its high current and voltage ratings make it suitable for:
1. DC-DC Converters: Used in power supply circuits for efficient voltage regulation.
2. Motor Drives: Employed in BLDC and stepper motor control for efficient switching.
3. Power Amplifiers: Utilized in RF and audio applications for signal amplification.
4. Battery Management Systems: Used in charging and protection circuits for lithium-ion batteries.
5. Smart Grid Applications: Involves energy conversion and distribution systems.
Its fast switching capabilities enhance overall system efficiency.
1. DC-DC Converters: Used in power supply circuits for efficient voltage regulation.
2. Motor Drives: Employed in BLDC and stepper motor control for efficient switching.
3. Power Amplifiers: Utilized in RF and audio applications for signal amplification.
4. Battery Management Systems: Used in charging and protection circuits for lithium-ion batteries.
5. Smart Grid Applications: Involves energy conversion and distribution systems.
Its fast switching capabilities enhance overall system efficiency.
Package
The IPD100N04S402ATMA1 is packaged in a TO-220 form factor. This package type is designed for better thermal performance and is suitable for power applications, allowing for efficient heat dissipation.
