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IPW65R065C7
+БОМ-
Производителькомпанией Infineon Technologies
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Мфр. Часть #IPW65R065C7
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В наличии2179
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Technology | Si |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Series | CoolMOS C7 |
| Factory Pack Quantity | 240 |
| Subcategory | Transistors |
| Part # Aliases | SP001080116 IPW65R065C7XKSA1 |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Height | 21.1 mm |
| Length | 16.13 mm |
| Width | 5.21 mm |
| Unit Weight | 0.211644 oz |
| Package / Case | TO-247-3 |
| Configuration | Single |
| Tradename | CoolMOS |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain - Source Breakdown Voltage | 650 V |
| Id - Continuous Drain Current | 33 A |
| Rds On | 65 mOhms |
| Vgs - Gate - Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate - Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 64 nC |
| Pd - Power Dissipation | 171 W |
| Channel Mode | Enhancement |
| Fall Time | 7 ns |
| Rise Time | 14 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn - Off Delay Time | 72 ns |
| Typical Turn - On Delay Time | 17 ns |
Обзор
Description
The IPW65R065C7 is a high-performance N-channel MOSFET manufactured by Infineon Technologies. It features a maximum drain-source voltage (V_DS) of 650V, making it suitable for various high-voltage applications. With a low on-state resistance (R_DS(on)) of approximately 0.065 ohms, it offers efficient conduction, reducing power losses during operation. This MOSFET is typically used in power supply circuits, automotive applications, and industrial motor drives, where efficiency and thermal performance are crucial.
The IPW65R065C7 is designed for easy integration into circuits, with fast switching capabilities that enhance its performance in high-frequency applications. It supports a maximum continuous drain current of around 30A, making it versatile for different load requirements. The device has a robust gate threshold voltage, ensuring reliable operation under varying conditions. Overall, the IPW65R065C7 is an excellent choice for engineers looking to improve system efficiency and reliability in demanding applications.
The IPW65R065C7 is designed for easy integration into circuits, with fast switching capabilities that enhance its performance in high-frequency applications. It supports a maximum continuous drain current of around 30A, making it versatile for different load requirements. The device has a robust gate threshold voltage, ensuring reliable operation under varying conditions. Overall, the IPW65R065C7 is an excellent choice for engineers looking to improve system efficiency and reliability in demanding applications.
Equivalent
The IPW65R065C7 is a 650V, 65A N-channel MOSFET. Equivalent products include the Infineon IPW65R065P7, STMicroelectronics STP65H065, and ON Semiconductor NTP65R065. For similar specifications, consider the Vishay SiHG065N65E or the Toshiba TK65R065. Always verify the datasheet for exact electrical characteristics and package compatibility before substitution.
Features
The IPW65R065C7 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for various applications, particularly in power conversion and motor control. Key features include:
1. Voltage Rating: 650V, suitable for medium voltage applications.
2. Current Rating: 65A, allowing for substantial power handling.
3. Low Conduction Losses: Enhanced efficiency due to reduced on-state voltage drop.
4. Fast Switching Speed: Facilitates high-frequency operation, improving overall system efficiency.
5. Low Gate Drive Power: Simplifies circuit design and reduces energy consumption.
6. Thermal Performance: Excellent thermal stability, enhancing reliability under varying temperature conditions.
7. Robust Packaging: Comes in a TO-247 package, suitable for easy mounting and effective heat dissipation.
These features make the IPW65R065C7 ideal for applications like inverters, converters, and industrial drives, where efficiency and reliability are paramount.
1. Voltage Rating: 650V, suitable for medium voltage applications.
2. Current Rating: 65A, allowing for substantial power handling.
3. Low Conduction Losses: Enhanced efficiency due to reduced on-state voltage drop.
4. Fast Switching Speed: Facilitates high-frequency operation, improving overall system efficiency.
5. Low Gate Drive Power: Simplifies circuit design and reduces energy consumption.
6. Thermal Performance: Excellent thermal stability, enhancing reliability under varying temperature conditions.
7. Robust Packaging: Comes in a TO-247 package, suitable for easy mounting and effective heat dissipation.
These features make the IPW65R065C7 ideal for applications like inverters, converters, and industrial drives, where efficiency and reliability are paramount.
Pinout
The IPW65R065C7 is an IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies, specifically designed for high-power applications. It features a pin count of 6. The pin configuration is as follows:
1. Gate (G): Controls the switching of the device.
2. Collector (C): The main terminal for the power output.
3. Emitter (E): Provides a return path for current.
4. Gate to Emitter (G to E): Used for driving the gate voltage.
5. Collector (C): Second collector pin for improved current handling.
6. Emitter (E): Second emitter pin, allowing for enhanced thermal performance.
The IPW65R065C7 is rated for a breakdown voltage of 650V and a maximum continuous current of 65A, making it suitable for applications such as motor drives, power inverters, and other high-voltage switching applications. Its efficiency and thermal performance are key features for reliable operation in demanding environments.
1. Gate (G): Controls the switching of the device.
2. Collector (C): The main terminal for the power output.
3. Emitter (E): Provides a return path for current.
4. Gate to Emitter (G to E): Used for driving the gate voltage.
5. Collector (C): Second collector pin for improved current handling.
6. Emitter (E): Second emitter pin, allowing for enhanced thermal performance.
The IPW65R065C7 is rated for a breakdown voltage of 650V and a maximum continuous current of 65A, making it suitable for applications such as motor drives, power inverters, and other high-voltage switching applications. Its efficiency and thermal performance are key features for reliable operation in demanding environments.
Application
The IPW65R065C7 is an IGBT (Insulated Gate Bipolar Transistor) designed for various applications, primarily in power electronics. Its application areas include:
1. Motor Drives: Used in variable frequency drives for industrial motors.
2. Renewable Energy: Employed in solar inverters and wind turbine converters.
3. Power Supplies: Utilized in switch-mode power supplies for efficient energy conversion.
4. Electric Vehicles: Applied in traction inverters and battery management systems.
5. HVAC Systems: Implemented in control systems for heating, ventilation, and air conditioning.
These applications benefit from its high efficiency, low switching losses, and robust performance in high-voltage environments.
1. Motor Drives: Used in variable frequency drives for industrial motors.
2. Renewable Energy: Employed in solar inverters and wind turbine converters.
3. Power Supplies: Utilized in switch-mode power supplies for efficient energy conversion.
4. Electric Vehicles: Applied in traction inverters and battery management systems.
5. HVAC Systems: Implemented in control systems for heating, ventilation, and air conditioning.
These applications benefit from its high efficiency, low switching losses, and robust performance in high-voltage environments.
Package
The IPW65R065C7 is packaged in a TO-247 format, which is a popular package type for power devices. This package provides excellent thermal performance and is suitable for high-power applications.
