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IPZ65R019C7
+БОМMOSFETs N-Ch 700V 75A TO247-4
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IPZ65R019C7
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Лист данных IPZ65R019C7 DataSheet
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В наличии3782
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Packaging | Tube |
| Standard Pack Qty | 240 |
Обзор
Description
The IPZ65R019C7 can handle a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications. It also features fast switching capabilities, which help reduce switching losses and improve overall system efficiency. The device is built using a superjunction technology that enhances performance and reduces conduction losses.
Overall, the IPZ65R019C7 is ideal for applications requiring efficient energy conversion with minimal heat generation, thereby improving reliability and performance in electronic systems.
Equivalent
1. STMicroelectronics: STP65N60M2
2. ON Semiconductor: NTP65N06
3. Vishay: SiHG65N60E
4. Renesas (formerly Intersil): HGTG20N60A4D
It's crucial to compare the specific electrical characteristics and package options to ensure compatibility in your application.
Features
1. High Efficiency: The MOSFET is optimized for low switching losses, contributing to higher efficiency in power conversion systems.
2. Low On-Resistance: It features a low R_DS(on), which reduces conduction losses and improves overall system performance.
3. Fast Switching: Designed for high-speed operations, it supports quick switching times, making it suitable for high-frequency applications.
4. Robust Design: The device has been constructed to handle significant voltage stresses, with a rating of around 650V, and to be reliable across various operating conditions.
5. Thermal Performance: It is built to maintain stability under thermal stress, enhancing reliability and longevity in demanding environments.
6. Package Options: Available in industry-standard packages, making it versatile for integration into existing designs.
These features make the IPZ65R019C7 an appealing choice for applications such as server power supplies, solar inverters, and industrial power supplies.
Pinout
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET is turned on or off, allowing or preventing current flow between the drain and source.
2. Drain (D): This pin is the terminal through which the main current flows into the MOSFET from the load. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S): This pin is the terminal through which current exits the MOSFET to the return path of the circuit or power supply.
The IPZ65R019C7 is known for its high efficiency and low on-resistance, making it suitable for applications such as power supplies, inverters, and various high-power applications. Always refer to the specific datasheet for detailed electrical characteristics and packaging information.
Manufacturer
Application
1. Switch Mode Power Supplies (SMPS): Used in adapters, chargers, and power supply units for efficient energy conversion.
2. Server and Telecom Power Supplies: Provides reliable power management in data centers and telecom equipment.
3. Photovoltaic Inverters: Enhances energy conversion efficiency in solar power systems.
4. Motor Drives: Supports variable frequency drives in industrial and consumer motor control.
5. Uninterruptible Power Supplies (UPS): Ensures consistent power availability and quality.
Its low on-resistance and high-speed switching capabilities make it suitable for these demanding applications.