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IRF510PBF
+БОМMOSFET N-CH 100V 5.6A TO220AB
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ПроизводительVishay Силиконикс
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Мфр. Часть #IRF510PBF
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Лист данных IRF510PBF DataSheet
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Пакет TO-220-3
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В наличии6997
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
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Спецификации
| Атрибут | Ценность |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 5.6A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 540mOhm @ 3.4A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 8.3 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 180 pF @ 25 V |
| Power Dissipation (Max) | 43W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
Обзор
Description
The IRF510PBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for electronic applications that require efficient power switching and amplification. It is commonly used in power management applications, including switching regulators, converters, and motor drivers. The IRF510PBF is part of the International Rectifier family, now under Infineon Technologies.
Key features of the IRF510PBF include:
1. Voltage and Current Ratings: It can handle a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 5.6A, making it suitable for moderate power applications.
2. R_DS(on): It has a low on-state resistance, typically around 0.54 ohms, which improves efficiency by reducing power loss during operation.
3. Package: It is available in a TO-220 package, which provides good thermal performance and is easy to mount on a heatsink for better heat dissipation.
Overall, the IRF510PBF is valued for its reliability, efficiency, and cost-effectiveness in various electronic circuits.
Key features of the IRF510PBF include:
1. Voltage and Current Ratings: It can handle a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 5.6A, making it suitable for moderate power applications.
2. R_DS(on): It has a low on-state resistance, typically around 0.54 ohms, which improves efficiency by reducing power loss during operation.
3. Package: It is available in a TO-220 package, which provides good thermal performance and is easy to mount on a heatsink for better heat dissipation.
Overall, the IRF510PBF is valued for its reliability, efficiency, and cost-effectiveness in various electronic circuits.
Equivalent
Equivalent products for the IRF510PBF MOSFET include:
1. IRF520
2. IRF530
3. IRF540
4. NTE2394
5. STP55NF06
These alternatives may vary slightly in specifications like voltage, current, and Rds(on), so it's important to verify that the substitute meets the requirements of your particular application.
1. IRF520
2. IRF530
3. IRF540
4. NTE2394
5. STP55NF06
These alternatives may vary slightly in specifications like voltage, current, and Rds(on), so it's important to verify that the substitute meets the requirements of your particular application.
Features
The IRF510PBF is an N-channel MOSFET known for its versatility and performance in electronic applications. Key features include:
1. Voltage and Current Rating: It has a maximum drain-source voltage (V_DS) of 100V and can handle a continuous drain current (I_D) of about 5.6A.
2. R_DS(on): The MOSFET offers a low on-state resistance, typically around 0.54 ohms, which helps reduce power loss and improve efficiency.
3. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, making it suitable for interfacing with microcontrollers and other low-voltage control circuits.
4. Package: It comes in a TO-220 package, which is easy to mount and provides efficient heat dissipation.
5. Applications: The IRF510PBF is commonly used in switching applications, amplifiers, power supplies, and various general-purpose electronic circuits.
6. Thermal Performance: It offers good thermal performance with a maximum power dissipation of around 43W, when properly heat-sinked.
These features make the IRF510PBF a reliable choice for various power management tasks in electronic projects.
1. Voltage and Current Rating: It has a maximum drain-source voltage (V_DS) of 100V and can handle a continuous drain current (I_D) of about 5.6A.
2. R_DS(on): The MOSFET offers a low on-state resistance, typically around 0.54 ohms, which helps reduce power loss and improve efficiency.
3. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, making it suitable for interfacing with microcontrollers and other low-voltage control circuits.
4. Package: It comes in a TO-220 package, which is easy to mount and provides efficient heat dissipation.
5. Applications: The IRF510PBF is commonly used in switching applications, amplifiers, power supplies, and various general-purpose electronic circuits.
6. Thermal Performance: It offers good thermal performance with a maximum power dissipation of around 43W, when properly heat-sinked.
These features make the IRF510PBF a reliable choice for various power management tasks in electronic projects.
Pinout
The IRF510PBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used for switching and amplification applications. It has a pin count of 3. The functions of these pins are as follows:
1. Gate (G): This pin is used to control the operation of the MOSFET. Applying a voltage to the gate modulates the conductivity between the drain and source.
2. Drain (D): This pin is where the current flows out of the MOSFET when it is in the "on" state. It is connected to the larger load that the MOSFET is intended to drive.
3. Source (S): The source pin is the terminal through which current enters the MOSFET. It is generally connected to the common ground or the negative supply voltage in a circuit.
Overall, the IRF510PBF is suitable for applications requiring efficient switching and is commonly used in RF amplifiers, motor drivers, and power converters due to its ruggedness and ability to handle moderate power levels.
1. Gate (G): This pin is used to control the operation of the MOSFET. Applying a voltage to the gate modulates the conductivity between the drain and source.
2. Drain (D): This pin is where the current flows out of the MOSFET when it is in the "on" state. It is connected to the larger load that the MOSFET is intended to drive.
3. Source (S): The source pin is the terminal through which current enters the MOSFET. It is generally connected to the common ground or the negative supply voltage in a circuit.
Overall, the IRF510PBF is suitable for applications requiring efficient switching and is commonly used in RF amplifiers, motor drivers, and power converters due to its ruggedness and ability to handle moderate power levels.
Manufacturer
The IRF510PBF is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company produces a wide range of products, including diodes, MOSFETs, optoelectronics, resistors, inductors, and capacitors. Vishay serves various industries, such as automotive, industrial, computing, consumer electronics, telecommunications, military, aerospace, and medical. The company is known for its innovation and quality, contributing significantly to advancements in electronic technology.
Application
The IRF510PBF is a N-channel MOSFET primarily used in applications requiring efficient power management and switching. Key areas include:
1. Switching Power Supplies: Offers high-speed switching for efficient power conversion.
2. Motor Control: Drives and controls motors in various applications such as robotics and industrial machines.
3. Audio Amplifiers: Used in audio amplification circuits due to its linear characteristics.
4. RF Amplifiers: Suitable for RF applications, providing amplification in communication devices.
5. DC-DC Converters: Essential in voltage regulation tasks for electronic devices.
6. Inverters: Used in converting DC to AC power, beneficial in solar and renewable energy systems.
7. General Switching Applications: Useful in relay replacement and circuit protection tasks.
1. Switching Power Supplies: Offers high-speed switching for efficient power conversion.
2. Motor Control: Drives and controls motors in various applications such as robotics and industrial machines.
3. Audio Amplifiers: Used in audio amplification circuits due to its linear characteristics.
4. RF Amplifiers: Suitable for RF applications, providing amplification in communication devices.
5. DC-DC Converters: Essential in voltage regulation tasks for electronic devices.
6. Inverters: Used in converting DC to AC power, beneficial in solar and renewable energy systems.
7. General Switching Applications: Useful in relay replacement and circuit protection tasks.
Package
The IRF510PBF is a power MOSFET typically packaged in a TO-220 package. This package type is designed for easy mounting on heatsinks and is commonly used in applications requiring efficient power switching.
