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IRF6617TR1
+БОМMOSFET N-CH 30V 14A DIRECTFET
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IRF6617TR1
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Лист данных IRF6617TR1 DataSheet
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Спецификации
| Атрибут | Ценность |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 55A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 8.1mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 15 V |
| Power Dissipation (Max) | 2.1W (Ta), 42W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET™ ST |
| Package / Case | DirectFET™ Isometric ST |
Обзор
Description
The IRF6617TR1 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for switching and amplification applications. It features low on-resistance, high-speed switching capabilities, and is suitable for power management in various electronic devices. With a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 60A, it is commonly used in power supplies, motor drivers, and DC-DC converters.
Key specifications include a maximum gate-source voltage (Vgs) of ±20V and a low threshold voltage (Vgs(th)) range, ensuring efficient operation in low-voltage applications. The package is typically available in a TO-220 or similar configuration, providing good thermal performance and ease of heatsinking.
The IRF6617TR1 is favored for its reliability and performance, making it an excellent choice for engineers seeking robust components for high-efficiency power circuits. Always refer to the manufacturer's datasheet for detailed electrical characteristics and application guidelines.
Key specifications include a maximum gate-source voltage (Vgs) of ±20V and a low threshold voltage (Vgs(th)) range, ensuring efficient operation in low-voltage applications. The package is typically available in a TO-220 or similar configuration, providing good thermal performance and ease of heatsinking.
The IRF6617TR1 is favored for its reliability and performance, making it an excellent choice for engineers seeking robust components for high-efficiency power circuits. Always refer to the manufacturer's datasheet for detailed electrical characteristics and application guidelines.
Equivalent
The IRF6617TR1 is an N-channel MOSFET. Equivalent products include the IRF6617, IRF6616, and STP16NF06. When selecting a substitute, check parameters such as voltage, current rating, RDS(on), and package type to ensure compatibility. Always refer to the datasheets for detailed specifications to confirm equivalence.
Features
The IRF6617TR1 is an N-channel MOSFET designed for high-efficiency power management applications. Key features include:
- Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V.
- Current Rating: Capable of handling continuous drain current (I_D) up to 62A at 25°C, making it suitable for high power applications.
- On-Resistance: Low on-resistance (R_DS(on)) of approximately 10.5 mΩ, ensuring minimal power loss during operation.
- Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for efficient driving with lower gate voltages.
- Package: Available in a TO-220 package, which facilitates good thermal management and ease of mounting.
- Switching Speed: Fast switching capabilities, making it ideal for applications such as DC-DC converters and motor drives.
- Thermal Resistance: Low thermal resistance enhances its performance in high-temperature environments.
These features make the IRF6617TR1 suitable for various applications in power electronics, including synchronous rectification and load switching.
- Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V.
- Current Rating: Capable of handling continuous drain current (I_D) up to 62A at 25°C, making it suitable for high power applications.
- On-Resistance: Low on-resistance (R_DS(on)) of approximately 10.5 mΩ, ensuring minimal power loss during operation.
- Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for efficient driving with lower gate voltages.
- Package: Available in a TO-220 package, which facilitates good thermal management and ease of mounting.
- Switching Speed: Fast switching capabilities, making it ideal for applications such as DC-DC converters and motor drives.
- Thermal Resistance: Low thermal resistance enhances its performance in high-temperature environments.
These features make the IRF6617TR1 suitable for various applications in power electronics, including synchronous rectification and load switching.
Pinout
The IRF6617TR1 is a N-channel MOSFET with a total of 3 pins. Its pin configuration is as follows:
1. Gate (G) - This pin controls the switching of the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D) - This pin is where the current enters the MOSFET when it is in the 'on' state.
3. Source (S) - This pin is where the current exits the MOSFET when it is conducting.
The IRF6617TR1 is designed for high-speed switching applications and can handle a maximum drain-source voltage of 60V and a continuous drain current of 25A. Its low on-resistance and fast switching capabilities make it suitable for various applications, including power management and motor control.
1. Gate (G) - This pin controls the switching of the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D) - This pin is where the current enters the MOSFET when it is in the 'on' state.
3. Source (S) - This pin is where the current exits the MOSFET when it is conducting.
The IRF6617TR1 is designed for high-speed switching applications and can handle a maximum drain-source voltage of 60V and a continuous drain current of 25A. Its low on-resistance and fast switching capabilities make it suitable for various applications, including power management and motor control.
Manufacturer
The IRF6617TR1 is manufactured by Infineon Technologies AG, a global semiconductor manufacturer based in Germany. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company is known for its expertise in automotive, industrial power management, security technologies, and IoT applications. Infineon plays a crucial role in enabling energy efficiency, connectivity, and security in various electronic systems and devices.
Application
The IRF6617TR1 is a high-speed N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor drives, and switching power supplies. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency designs in consumer electronics, renewable energy systems (like solar inverters), and industrial automation. Additionally, it can be utilized in battery management systems and automotive applications where efficient power control is essential.
Package
The IRF6617TR1 is packaged in a DPAK (TO-252) format. This surface-mount package is designed for efficient thermal performance and is commonly used in power management applications.
