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IRF7503TRPBF
+БОМMOSFET 2N-CH 30V 2.4A MICRO8
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IRF7503TRPBF
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Лист данных IRF7503TRPBF DataSheet
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В наличии7701
365 Дни гарантии качества
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Спецификации
| Атрибут | Ценность |
| Series | HEXFET® |
| PartStatus | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 2.4A |
| RdsOn(Max)@Id,Vgs | 135mOhm @ 1.7A, 10V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 12nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 210pF @ 25V |
| Power-Max | 1.25W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
| SupplierDevicePackage | Micro8™ |
| BaseProductNumber | IRF7503 |
Обзор
Description
Key characteristics include a gate threshold voltage (V_GS(th)) of 2-4V, allowing for easy drive from standard logic levels. The IRF7503TRPBF is housed in a TO-220 package, providing good thermal performance for heat dissipation. Additionally, it is compliant with RoHS regulations, ensuring it is free from hazardous materials. Overall, the IRF7503TRPBF is a reliable choice for engineers seeking robust performance in high-voltage and high-current applications.
Equivalent
Features
1. Voltage Rating: It typically handles a maximum drain-source voltage (VDS) of 30V.
2. Current Rating: The device can support continuous drain current (ID) of up to 75A, making it suitable for high-power applications.
3. RDS(on): It has a low on-resistance, typically around 8 mΩ at VGS = 10V, ensuring minimal power loss and heat generation during operation.
4. Fast Switching: The device is characterized by rapid switching speeds, which enhances performance in power management applications.
5. Package: It comes in a TO-220 package, facilitating effective heat dissipation and easy mounting in various circuits.
6. Applications: Commonly used in motor control, power supplies, and other high-speed switching applications.
These features make the IRF7503TRPBF suitable for a wide range of electronic devices and systems requiring efficient power management and control.
Pinout
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal connected to ground or the negative side of the power supply.
The other 5 pins are typically for various internal functions, such as body diodes or additional features depending on the specific packaging and application. The IRF7503TRPBF is designed for high-speed switching applications and can handle significant voltage and current, making it suitable for power management and conversion in various electronic circuits. Its low on-resistance contributes to higher efficiency in power applications.
Manufacturer
Infineon is known for its expertise in power management and energy-efficient solutions, focusing on enabling technologies for various sectors, including automotive, IoT, and renewable energy. The IRF7503TRPBF is a part of their product line that offers efficient switching capabilities, primarily used in power management applications.
Founded in 1999, Infineon has established itself as a key player in the global semiconductor market, committed to innovation and sustainability. The company emphasizes quality and reliability in its product offerings, supporting the growing demand for advanced semiconductor solutions across multiple industries.