IRFB3806PBF

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IRFB3806PBF

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MOSFET N-CH 60V 43A TO220AB

  • Производителькомпанией Infineon Technologies

  • Мфр. Часть #IRFB3806PBF

  • Лист данных IRFB3806PBF DataSheet

  • Пакет TO-220-3

  • В наличии5920

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Спецификации

Атрибут Ценность
Package Tube
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 43A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 15.8mOhm @ 25A, 10V
Vgs(th)(Max)@Id 4V @ 50µA
GateCharge(Qg)(Max)@Vgs 30 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1150 pF @ 50 V
PowerDissipation(Max) 71W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

Обзор

Description

The IRFB3806PBF is a N-channel MOSFET from Infineon Technologies, designed for high-power applications. Key features include:
- Voltage Rating: 75V
- Current Rating: 180A (pulsed) / 120A (continuous)
- Low On-Resistance (RDS(on)): 3.6mΩ (max at 10V VGS)
- Fast Switching: Suitable for motor control, power supplies, and inverters
- Package: TO-220AB (through-hole)
It operates with a gate threshold voltage (VGS(th)) of 2–4V and is optimized for efficiency in high-current, low-loss circuits. Common uses include DC-DC converters, automotive systems, and industrial drives.
For best performance, ensure proper heat sinking due to its high power dissipation capability.

Equivalent

Equivalent products to the IRFB3806PBF (N-channel MOSFET, 75V, 180A, 3.7mΩ) include:
- IRFB3806 (same specs, different packaging)
- IRFB3206PBF (similar, but 60V, 210A, 2.5mΩ)
- IRFB3306PBF (100V, 130A, 5.6mΩ)
- STP160N75F3 (STMicro, 75V, 160A, 4.5mΩ)
- AUIRFB3806 (same specs, automotive-grade)
Check datasheets for exact compatibility.

Features

The IRFB3806PBF is a N-channel MOSFET with the following key features:
- Voltage Rating: 75V
- Current Rating: 180A (pulsed), 140A (continuous)
- Low On-Resistance (RDS(on)): 3.6mΩ (max at VGS=10V)
- Fast Switching: Low gate charge (Qgs, Qgd) for efficient performance
- High Power Handling: Suitable for high-current applications
- Avalanche Rated: Robust against inductive spikes
- Package: TO-220AB (through-hole) for easy mounting
Ideal for power supplies, motor control, and DC-DC converters.

Pinout

The IRFB3806PBF is a TO-220AB packaged N-channel MOSFET with 3 pins:
1. Gate (G): Controls the switching operation (input signal).
2. Drain (D): Connects to the load (high-voltage side).
3. Source (S): Ground/reference connection.
Key Features:
- VDS: 75V (drain-source voltage).
- ID: 160A (continuous drain current).
- Low RDS(on): 2.3mΩ (typical) for efficient power handling.
Commonly used in power switching, motor drives, and DC-DC converters.

Application

The IRFB3806PBF, a high-power N-channel MOSFET, is commonly used in:
1. Switching Power Supplies – Efficient power conversion in DC-DC and AC-DC systems.
2. Motor Control – Drives for brushed/brushless motors in industrial and automotive applications.
3. Solar Inverters – Energy conversion in photovoltaic systems.
4. UPS Systems – Ensures reliable power backup in critical infrastructure.
5. Automotive Electronics – Used in electric vehicles (EVs) for battery management and traction control.
Its low on-resistance (RDS(on)) and high current handling (195A) make it ideal for high-efficiency, high-power applications.

Package

The IRFB3806PBF is a Power MOSFET housed in a TO-220AB package. This through-hole package is widely used for power applications due to its robust thermal performance and ease of mounting on heat sinks. The TO-220AB features three leads (gate, drain, source) and a metal tab for efficient heat dissipation. It is suitable for high-current and high-voltage switching applications.

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