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IRFL9014TRPBF
+БОМMOSFET P-CH 60V 1.8A SOT223
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ПроизводительVishay Силиконикс
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Мфр. Часть #IRFL9014TRPBF
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Лист данных IRFL9014TRPBF DataSheet
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Пакет TO-261-4
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В наличии2187
365 Дни гарантии качества
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Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 1.8A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 500mOhm @ 1.1A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 12 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 270 pF @ 25 V |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223 |
Обзор
Description
The "TRPBF" suffix indicates the packaging and environmental compliance: it's usually in a tape and reel form for automated assembly processes and is lead-free, aligning with RoHS (Restriction of Hazardous Substances) standards. This makes it suitable for modern applications where environmental compliance and efficient production are necessary.
The IRFL9014TRPBF is typically used in various applications such as DC-DC converters, motor drivers, and load switches. Its compact form factor and reliable performance make it a popular choice among designers and engineers seeking to optimize space and efficiency in their projects.
Equivalent
1. 2N7002 A popular N-channel MOSFET with similar voltage and current ratings.
2. BSS123Another N-channel MOSFET with comparable specifications.
3. BS170Often used as a substitute for low-power applications.
4. PMV20XN: N-channel MOSFET with similar characteristics.
5. MMBF170SOT-23 packaged N-channel MOSFET equivalent.
Always verify specific electrical characteristics and package compatibility when selecting a replacement.
Features
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of up to 100V, allowing it to handle relatively high-voltage applications. The continuous drain current (I_D) is around 0.2A, suitable for low to moderate current applications.
2. R_DS(on): It offers a low on-resistance, typically around 4Ω, enhancing efficiency by reducing power losses when the MOSFET is in the 'on' state.
3. Package: The component is available in a Surface Mount Device (SMD) package, which is suitable for compact PCB designs and automated assembly processes.
4. Applications: It's commonly used in switching applications, such as in DC-DC converters, driving small motors, or for signal processing tasks in various electronic circuits.
5. Thermal Performance: It is designed to handle a moderate power level, backed by efficient thermal management considerations inherent in its design and package type.
These features make the IRFL9014TRPBF suitable for use in compact, energy-efficient electronic devices where space and power efficiency are critical.
Pinout
In the SOIC-8 package of the IRFL9014TRPBF, the pins are typically arranged as follows:
1. Source (S)
2. Source (S)
3. Source (S)
4. Gate (G)
5. Drain (D)
6. Drain (D)
7. Drain (D)
8. Drain (D)
The multiple Source and Drain pins help in reducing the on-resistance and improving the current-carrying capability of the device. The Gate pin controls the opening and closing of the semiconductor channel between the Source and Drain terminals, thereby regulating the flow of current through the device.
For specific applications and detailed pin configuration, please refer to the manufacturer's datasheet.