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IRFP4768PBF
+БОМMOSFET N-CH 250V 93A TO247AC
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IRFP4768PBF
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Лист данных IRFP4768PBF DataSheet
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В наличии7193
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Спецификации
| Атрибут | Ценность |
| Series | HEXFET® |
| Part Status | Last Time Buy |
| Base Product Number | IRFP4768 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 250 V |
| Current - Continuous Drain (Id) @ 25°C | 93A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 17.5mOhm @ 56A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 10880 pF @ 50 V |
| Power Dissipation (Max) | 520W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
| Package | TO-247-3 |
| Packaging | Tube |
Обзор
Description
Key features of the IRFP4768PBF include low on-state resistance (R_DS(on)), which contributes to reduced power losses and improved efficiency. It is housed in a TO-247AC package, offering good thermal performance and ease of mounting for heat dissipation. The device also supports fast switching speeds, enabling efficient energy conversion in high-frequency applications.
The IRFP4768PBF is manufactured by Infineon Technologies, following the lead-free PBF (Polybrominated Flame Retardant) standard, which aligns with environmental regulations. This makes it a suitable choice for eco-friendly designs. Its robust performance characteristics make it a popular choice in industrial and commercial power management systems.
Equivalent
1. IRFP260N - Similar in power handling.
2. FQA28N50 - Fairchild/ON Semiconductor equivalent.
3. STW57N65M5 - From STMicroelectronics with similar characteristics.
4. IXFH48N50 - IXYS equivalent with comparable ratings.
Always cross-reference datasheets to ensure the equivalency in parameters like Rds(on), Vgs, and thermal characteristics for your specific application.
Features
1. N-Channel MOSFET: Facilitates the efficient handling of high power levels.
2. Voltage Rating: It can handle a maximum drain-source voltage (V_ds) of 250V.
3. Current Capability: The device supports a continuous drain current (I_d) of up to 76A, enhancing its suitability for demanding applications.
4. Low On-Resistance: With a typical R_ds(on) of 19mΩ, it minimizes power loss and improves efficiency.
5. Fast Switching: Optimized for rapid switching, which is ideal for applications like power supplies and motor control.
6. Rugged Construction: Designed to withstand high energy pulses in the avalanche and commutation modes.
7. Thermal Performance: Comes in a TO-247 package, which aids in heat dissipation and maintains reliability under thermal stress.
8. Environmentally Friendly: The "PBF" in its name signifies that it is lead-free and RoHS compliant, adhering to environmental regulations.
These features make the IRFP4768PBF a versatile choice for industrial and consumer electronics requiring robust power management.
Pinout
The IRFP4768PBF features a standard TO-247 package, which generally includes three pins:
1. Gate (G): This pin is used to control the MOSFET's operation. A voltage applied here can turn the MOSFET on or off.
2. Drain (D): This pin is the main current-carrying terminal. It connects to the load and when the MOSFET is on, current flows from drain to source.
3. Source (S): This pin is connected to the ground or the negative side of the input supply. It completes the circuit for the current flow.
This MOSFET is commonly employed in power supply circuits, motor control applications, and other environments requiring high efficiency and fast switching.
Manufacturer
Application
1. Power Supply Units (PSUs): Used in switched-mode power supplies (SMPS) for improved efficiency and performance.
2. Motor Control: Suitable for motor drives in industrial and automotive applications due to its high current handling capability.
3. Inverters: Utilized in DC-AC inverters, particularly for renewable energy systems like solar inverters.
4. Uninterruptible Power Supplies (UPS): Helps in efficient power conversion and management.
5. Audio Amplifiers: Used in high-power audio amplifier circuits for better thermal performance and reliability.
These characteristics make the IRFP4768PBF ideal for high-reliability and high-performance electronic applications.
Package
Frequently Asked Questions
Q: Can the IRFP4768PBF be used in high-power switching applications at 250V?
A: Yes, its 93A continuous drain current and 17.5mOhm Rds(on) at 10V make it suitable for high-efficiency power supplies and converters.
Q: What is the maximum gate drive voltage allowed for this MOSFET?
A: The maximum gate-to-source voltage (Vgs) is ±20V. Infineon recommends a typical drive voltage of 10V for optimal Rds(on).
Q: How does the high input capacitance (10880 pF) affect switching speed?
A: High Ciss (10880 pF @ 50V) requires a stronger gate driver to achieve fast switching, but it benefits from low on-resistance for conduction losses.
Q: What is the intended package and mounting type for this part?
A: It comes in a TO-247AC through-hole package, ideal for high-power dissipation up to 520W with proper heatsinking.
Q: Is the IRFP4768PBF a current product or end-of-life?
A: Its status is “Last Time Buy,” so it is near discontinuation. Plan for last-time purchases or consider replacing with a newer Infineon HEXFET® series part.
Q: Can this MOSFET operate at very high temperatures?
A: Yes, it has an operating junction temperature range of -55°C to 175°C, suitable for rugged industrial environments.
