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IRFR3710ZTRLPBF
+БОМIRFR3710 - 12V-300V N-CHANNEL PO
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ПроизводительМеждународный исправитель
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Мфр. Часть #IRFR3710ZTRLPBF
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Лист данных IRFR3710ZTRLPBF DataSheet
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Пакет TO-252-3
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В наличии4042
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package / Case | Bulk |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 42A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 18mOhm @ 33A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 100 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2930 pF @ 25 V |
| Power Dissipation (Max) | 140W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
Обзор
Description
The "IRFR" prefix indicates that it is part of the Infineon family of MOSFETs, while "3710" typically refers to its specific series or performance characteristics. The "Z" signifies lead-free compliance, adhering to environmental standards, and "TRLPBF" refers to its packaging and lead-free status.
Overall, the IRFR3710ZTRLPBF is valued for its ability to efficiently handle power loads with minimal heat generation, contributing to the overall efficiency and longevity of electronic systems in which it's employed.
Equivalent
1. STP55NF06 - by STMicroelectronics.
2. FQP33N10 - by ON Semiconductor.
3. NTD4906N - by ON Semiconductor.
4. IPP50R399CP - by Infineon Technologies.
Ensure to verify the specifications such as voltage, current ratings, and package type to ensure compatibility with your application.
Features
1. N-Channel MOSFET: This device is an N-channel MOSFET, which is typically used in switching applications.
2. 44V Drain-Source Voltage: It has a maximum drain-source voltage (V_DS) of 44 volts, making it suitable for various low to medium voltage applications.
3. Low On-Resistance: The MOSFET features a low R_DS(on), typically around 23 mΩ at V_GS = 10V, which reduces conduction losses and improves efficiency.
4. High Current Capacity: It supports a continuous drain current (I_D) of up to 57A, suitable for high-current applications.
5. Logic Level Gate Drive: The device is designed for operation with logic level gate drives, allowing for easy integration with microcontrollers and other digital circuits.
6. SMD Package: Available in a surface-mount DPAK package (TO-252), which is ideal for automated assembly and compact designs.
7. Environmentally Friendly: The product is RoHS compliant and lead-free, aligning with environmental standards.
These features make the IRFR3710ZTRLPBF a versatile choice for power management in various electronic devices.
Pinout
The IRFR3710ZTRLPBF comes in a TO-252 package, also known as DPAK, which generally features three pins:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate regulates the flow of current between the source and drain.
2. Drain (D): Current flows from the drain to the source when the MOSFET is in the on state.
3. Source (S): This pin is the terminal through which the current enters the MOSFET from the load.
Additionally, the MOSFET may have a tab or metal plate that is connected internally to the drain, which helps in heat dissipation and may also serve as a fourth connection point.
The IRFR3710ZTRLPBF is widely used in power management applications, including DC-DC converters, motor drives, and other high-efficiency power supplies.
Manufacturer
Application
1. Power Supplies: Utilized in switch-mode power supplies (SMPS) for improved energy efficiency.
2. Motor Control: Employed in motor drivers for industrial and consumer electronics.
3. Battery Management: Used in battery protection circuits and charging systems.
4. DC-DC Converters: Integral in efficient voltage conversion for electronic devices.
5. Automotive: Applied in automotive electronics for systems requiring robust power handling.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.