IRFR3710ZTRPBF

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IRFR3710ZTRPBF

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MOSFET N-CH 100V 42A DPAK

  • Производителькомпанией Infineon Technologies

  • Мфр. Часть #IRFR3710ZTRPBF

  • Лист данных IRFR3710ZTRPBF DataSheet

  • Пакет TO-252-3

  • В наличии7158

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Спецификации

Атрибут Ценность
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 42A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 18mOhm @ 33A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 100 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 2930 pF @ 25 V
Power Dissipation (Max) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak

Обзор

Description

The IRFR3710ZTRPBF is a specific model of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. It is designed for use in various high-efficiency power management applications. These applications typically include DC-DC converters, power supplies, and motor control circuits in both industrial and consumer electronics.
Key features of the IRFR3710ZTRPBF include:
1. N-Channel MOSFET: It operates as an N-channel device, which typically features low on-state resistance, allowing for efficient power conversion.

2. Voltage and Current Ratings: This MOSFET is designed to handle significant voltages and currents, making it suitable for high-power applications. Specific ratings should be checked in the datasheet.
3. Package Type: The "TRPBF" designation often refers to the packaging and lead finish, indicating it is RoHS compliant (lead-free) and usually available in a standard package for surface mounting.
4. Efficiency: The device is engineered to deliver high efficiency with reduced power losses, enhancing overall system performance.
These attributes make the IRFR3710ZTRPBF a reliable choice for engineers designing circuits that require robust power handling capabilities.

Equivalent

The IRFR3710ZTRPBF is an N-channel MOSFET. Equivalent products include:
1. STP60NF06 from STMicroelectronics
2. FQP30N06L from ON Semiconductor
3. IRLZ44NPBF from Infineon Technologies (formerly part of International Rectifier)
4. NTD5867NL from ON Semiconductor
Always verify the specifications such as voltage, current, and Rds(on) to ensure compatibility for your specific application.

Features

The IRFR3710ZTRPBF is a power MOSFET that features a variety of specifications making it suitable for high-efficiency applications. Key features include:
1. N-Channel MOSFET: It is designed for switching and amplifying electronic signals in N-Channel mode.
2. Voltage and Current Ratings: It can handle a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 57A.
3. Low On-Resistance: It has a low on-state resistance (R_DS(on)) which minimizes power loss and increases efficiency.
4. Fast Switching: Capable of high-speed switching, which enhances performance in quick-response applications.
5. Package Type: Comes in a D-Pak (TO-252) surface-mount package, making it suitable for compact designs.
6. RoHS Compliant: It meets the Restriction of Hazardous Substances standards, ensuring environmental safety.
These features make the IRFR3710ZTRPBF highly suitable for applications like DC-DC converters, motor drives, and load switches in various electronic devices.

Pinout

The IRFR3710ZTRPBF is a N-channel MOSFET designed for high-speed switching applications. It typically comes in a surface-mount DPAK (TO-252) package, which generally has 3 pins. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying voltage to the gate allows current to flow between the drain and the source.
2. Drain (D): This pin is where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply.
The IRFR3710ZTRPBF is used for applications requiring efficient power management and switching, such as in motor controllers, power supplies, and other electronic circuits. It is part of the HEXFET® Power MOSFET range, designed for low on-state resistance and fast switching speeds.

Manufacturer

The IRFR3710ZTRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that designs, develops, and produces a broad range of semiconductor solutions, including microcontrollers, sensors, automotive ICs, power management ICs, and security solutions. The company is known for its focus on energy efficiency, mobility, and security within the semiconductor sector. Infineon's products are used in various applications across different industries, such as automotive, industrial, communication, and consumer electronics.

Application

The IRFR3710ZTRPBF is a power MOSFET commonly used in applications requiring efficient power management and switching. Its key application areas include:
1. Power Supplies: Used in switch-mode power supplies for efficient voltage regulation.
2. Motor Control: Ideal for controlling motors in industrial and consumer applications due to its high efficiency and fast switching capabilities.
3. DC-DC Converters: Utilized in DC-DC conversion circuits for efficient power conversion.
4. Battery Management: Employed in battery charging and protection circuits.
5. Automotive Systems: Used in various automotive electronics for power control and distribution.
These applications benefit from the MOSFET's low on-resistance and high-speed switching capabilities.

Package

The IRFR3710ZTRPBF is packaged in a DPAK (TO-252) surface-mount package. This package type is commonly used for power MOSFETs, providing good thermal performance and compact size suitable for automated assembly processes.

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