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IRFR9014TRPBF
+БОМMOSFET P-CH 60V 5.1A DPAK
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ПроизводительVishay Силиконикс
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Мфр. Часть #IRFR9014TRPBF
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Лист данных IRFR9014TRPBF DataSheet
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Пакет TO-252-3
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В наличии4769
365 Дни гарантии качества
7*24 часы обслуживания каранти
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Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 5.1A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 500mOhm @ 3.1A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 12 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 270 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
Обзор
Description
- Voltage Rating: -60V (Drain-to-Source, VDS)
- Current Rating: -12A (Continuous Drain Current, ID)
- Low On-Resistance: 85mΩ (max at VGS = -10V)
- Fast Switching: Suitable for high-frequency circuits
- Package: TO-252 (DPAK), surface-mountable
Common uses include DC-DC converters, motor control, load switching, and battery management in automotive, industrial, and consumer electronics. Its P-channel configuration simplifies high-side switching by eliminating the need for a charge pump.
This MOSFET is RoHS-compliant and offers reliable performance with robust thermal characteristics. For detailed specs, refer to the datasheet.
Equivalent
- IRF9Z34NPBF (-55V, -12A)
- IRF9Z24NPBF (-55V, -11A)
- STP55P06FP (-60V, -55A)
- FQP27P06 (-60V, -27A)
Check datasheets for exact specs like RDS(on) and gate charge. Alternatives may vary slightly in voltage/current ratings.
Features
- Voltage Rating: -60V (Drain-to-Source, VDSS)
- Current Rating: -12A (Continuous Drain Current, ID)
- Low On-Resistance: 0.27Ω (max) @ VGS = -10V
- Gate Threshold Voltage: -2V to -4V (VGS(th))
- Fast Switching: Low gate charge (Qg = 13nC typical)
- Power Dissipation: 42W (TC = 25°C)
- Package: TO-252 (DPAK), surface-mount
- Applications: Power management, DC-DC converters, motor control
Compact, efficient, and suitable for medium-power switching.
Pinout
1. Gate (G) – Controls the MOSFET's switching.
2. Drain (D) – Connects to the load (high-side in P-channel).
3. Source (S) – Connected to the supply voltage.
Key Features:
- Voltage Rating: -60V
- Current Rating: -12A
- Low On-Resistance (RDS(on)): ~0.27Ω
- Logic-Level Gate Drive (suitable for 5V/10V control).
Commonly used in power switching, DC-DC converters, and motor control.
Application
1. Power Management – Switching and regulation in DC-DC converters, battery protection circuits.
2. Motor Control – Driving small motors in automotive and industrial systems.
3. Load Switching – Efficient on/off control in power distribution (e.g., portable devices).
4. Inverters & Converters – Used in low-voltage power conversion applications.
5. Consumer Electronics – Power switching in smartphones, laptops, and IoT devices.
Its low on-resistance (RDS(on)) and compact SMD package make it suitable for space-constrained, energy-efficient designs.
