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IRFR9210PBF
+БОМMOSFET P-CH 200V 1.9A DPAK
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ПроизводительVishay Силиконикс
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Мфр. Часть #IRFR9210PBF
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В наличии4781
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | Vishay Siliconix |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 1.9A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 3Ohm @ 1.1A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 8.9 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 170 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
Обзор
Description
IRFR9210PBF is a Pb-free N-channel HEXFET power MOSFET from International Rectifier (now Infineon). It is designed for high-efficiency switching in power electronics such as switch-mode power supplies, DC-DC converters, motor drivers, and inverters. As an enhancement-mode device, it conducts when the gate is driven above the source and turns off when the gate is low.
Key points:
- Pb-free packaging (PBF suffix)
- N-channel power MOSFET with low conduction losses and fast switching
- Suitable for high-voltage/high-current switching applications
- Body diode provides reverse-current protection
- Gate drive referenced to the source; typical drive levels depend on the variant
Package/pinout: standard MOSFET layout (Gate, Drain, Source) with the drain tied to the tab; available in surface-mount Pb-free packages. For exact electrical ratings (Vds, Id, Rds(on)), thermal performance, and package type, consult the official datasheet.
Key points:
- Pb-free packaging (PBF suffix)
- N-channel power MOSFET with low conduction losses and fast switching
- Suitable for high-voltage/high-current switching applications
- Body diode provides reverse-current protection
- Gate drive referenced to the source; typical drive levels depend on the variant
Package/pinout: standard MOSFET layout (Gate, Drain, Source) with the drain tied to the tab; available in surface-mount Pb-free packages. For exact electrical ratings (Vds, Id, Rds(on)), thermal performance, and package type, consult the official datasheet.
Equivalent
I can’t reliably list exact equivalents without device ratings. IRFR9210PBF is a MOSFET; equivalents depend on Vds, Id, Rds(on), package, and N- or P-channel. Please provide: max Vds, continuous Id, Rds(on) max, and package type. For quick cross-ref, use the datasheet Cross Reference or distributor tools (Digi-Key/Mouser) to map to Pb-free parts with similar specs from Vishay, ON Semiconductor, ROHM, etc.
Features
Here are the typical features of the IRFR9210PBF (Pb-free version):
- N-channel enhancement-mode power MOSFET
- Pb-free (PBF) packaging
- High drain current capability with low on-resistance for efficiency
- Fast switching with low gate charge
- Integrated body diode for reverse conduction
- Robust avalanche energy/ruggedness for protection against inductive loads
- Wide operating temperature range
- RoHS compliant; suitable for switch-mode power supplies, motor drives, DC-DC converters
Note: for exact electrical specs (Vds, Id, Rdson, Qg, package type), please consult the official datasheet.
- N-channel enhancement-mode power MOSFET
- Pb-free (PBF) packaging
- High drain current capability with low on-resistance for efficiency
- Fast switching with low gate charge
- Integrated body diode for reverse conduction
- Robust avalanche energy/ruggedness for protection against inductive loads
- Wide operating temperature range
- RoHS compliant; suitable for switch-mode power supplies, motor drives, DC-DC converters
Note: for exact electrical specs (Vds, Id, Rdson, Qg, package type), please consult the official datasheet.
Pinout
- Pin count: 3 (three-terminal device: Gate, Drain, Source)
- Function: N-channel enhancement-mode power MOSFET used as a high-current switching/transistor in power electronic circuits.
- Function: N-channel enhancement-mode power MOSFET used as a high-current switching/transistor in power electronic circuits.
Manufacturer
- Manufacturer: Infineon Technologies AG (the IR prefix comes from International Rectifier, which Infineon acquired in 2015).
- What kind of company: A German multinational semiconductor manufacturer, a leading producer of power semiconductors and system solutions for automotive, industrial, and security markets.
- What kind of company: A German multinational semiconductor manufacturer, a leading producer of power semiconductors and system solutions for automotive, industrial, and security markets.
Application
IRFR9210PBF is a high-speed N-channel power MOSFET. Common application areas include:
- Switch‑mode power supplies and DC‑DC converters (buck/boost/inverter stages)
- Motor control (DC, BLDC, stepper) using PWM
- High/low‑side switching and load switches in power rails
- Solar inverters, battery management, and energy storage systems
- Automotive and industrial power electronics (inverters, choppers, power stages)
Note: design/use should follow the device’s datasheet limits (V, I, Rds(on), safe operating area).
- Switch‑mode power supplies and DC‑DC converters (buck/boost/inverter stages)
- Motor control (DC, BLDC, stepper) using PWM
- High/low‑side switching and load switches in power rails
- Solar inverters, battery management, and energy storage systems
- Automotive and industrial power electronics (inverters, choppers, power stages)
Note: design/use should follow the device’s datasheet limits (V, I, Rds(on), safe operating area).
Package
D2PAK (TO-263) surface-mount package, Pb-free (PbF).
