IRFR9214TRPBF

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IRFR9214TRPBF

+БОМ

MOSFET P-CH 250V 2.7A DPAK

  • ПроизводительVishay Силиконикс

  • Мфр. Часть #IRFR9214TRPBF

  • В наличии5187

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Supplier Vishay Siliconix
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain(Id) @ 25°C 2.7A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 3Ohm @ 1.7A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 14 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 220 pF @ 25 V
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak

Обзор

Description

IRFR9214TRPBF is a Pb-free N-channel enhancement‑mode power MOSFET from the IR/Infineon family. It’s a discrete switch used for high‑efficiency power conversion and motor drive applications. The TRPBF suffix indicates a Tape & Reel Pb‑free packaging suitable for automated assembly.
Key points:
- Used as a low-side or high-side power switch in DC–DC converters, motor drivers, and general power switching.
- Check datasheet for exact electricals: drain-source voltage (VDS), continuous drain current (ID), on‑resistance (RDS(on)) at VGS (e.g., 4.5V/10V), total gate charge (Qg), and switching characteristics (td(on), tr, td(off)).
- Also review thermal resistance and package footprint for heat sinking.
How to use:
- Gate driven by a suitable gate driver within VGS limits.
- Source to reference (ground for low-side).
- Include flyback diode or snubber for inductive loads.
- Attach to a heatsink if required.
For precise numbers and pinout, consult the official IRFR9214TRPBF datasheet.

Features

Here are the typical features of the IRFR9214TRPBF (power MOSFET):
- N-channel enhancement-mode power MOSFET
- Trench/channel design for low on-resistance and high efficiency
- Fast switching capability with low gate charge
- Robust body diode and good reverse-recovery behavior
- Avalanche-rated/energy rugged for transient protection
- Pb-free (RoHS-compliant) packaging, in a TO-252 (DPAK) style package (TRPBF)
- Suitable for high-current, high-efficiency switching applications
- Broad operating temperature range and rugged mechanical/thermal performance
Note: For exact electrical specs (Vds, Id, Rds(on), Qg, etc.), please consult the official datasheet.

Pinout

IRFR9214TRPBF is a 3-pin N‑channel enhancement‑mode power MOSFET. Pin functions (viewing the front with leads down, tab to rear):
1. Gate — control input
2. Drain — main terminal (also connected to the metal tab/heatsink)
3. Source — return/reference terminal
(TRPBF = tape & reel, Pb‑free packaging.)

Manufacturer

The IRFR9214TRPBF is a MOSFET part originally manufactured by International Rectifier (IR). International Rectifier was a U.S.-based semiconductor company specializing in power MOSFETs and power-management devices; it was acquired by Infineon Technologies in 2015 and its product lines are now sold under the Infineon/IR power-semiconductor business.

Application

- DC-DC converters (buck/boost/buck-boost, point-of-load regulators)
- Switching power supplies and adapters (SMPS)
- Motor/actuator drive circuits (low-side switches for DC motors, steppers)
- Solar inverters and energy-storage power stages
- Load-switches and protection circuits in consumer electronics
- General high-speed switching in lighting drivers and industrial control systems
Note: IRFR9214TRPBF is an N-channel power MOSFET suitable for these switching applications.

Package

"TRPBF" means the IRFR9214 is shipped on tape‑and‑reel (TR) and is Pb‑free (PBF). This suffix does not specify the mechanical package—check the manufacturer datasheet for the actual package type (e.g., TO‑220, DPAK, etc.).

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