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IRS2127STRPBF
+БОМIC GATE DRVR HIGH-SIDE 8SOIC
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Производителькомпанией Infineon Technologies
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Мфр. Часть #IRS2127STRPBF
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Лист данных IRS2127STRPBF DataSheet
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Пакет SOIC-8
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В наличии4633
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
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Спецификации
| Атрибут | Ценность |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DrivenConfiguration | High-Side |
| ChannelType | Single |
| NumberofDrivers | 1 |
| GateType | IGBT, N-Channel MOSFET |
| Voltage-Supply | 12V ~ 20V |
| LogicVoltage-VILVIH | 0.8V, 2.5V |
| Current-PeakOutput(SourceSink) | 290mA, 600mA |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 80ns, 40ns |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Обзор
Description
Key features of the IRS2127STRPBF include the ability to operate with voltages up to 600V, providing robust isolation between low and high voltage components. The driver features high-speed switching capabilities, ensuring efficient power conversion and management. It also includes built-in protection features such as under-voltage lockout and shoot-through prevention, which help in safeguarding the circuit against potential faults.
The "STR" in the part number typically denotes the specific package type or configuration, which in this case is a surface-mount package suitable for automated assembly in electronic manufacturing. The device is RoHS compliant, indicating it meets environmental and safety standards.
Equivalent
1. IR2117 by Infineon Technologies
2. MIC5019 from Microchip Technology
3. FAN7382 by ON Semiconductor
4. LM5101 from Texas Instruments
These alternatives may vary slightly in specifications, so it's crucial to verify parameters like voltage ratings, current capacity, and switching speed to ensure compatibility with your application.
Features
1. High-Side Gate Drive: Capable of driving high-voltage power transistors with a floating channel up to 600V.
2. Gate Drive Voltage: Provides a gate drive voltage of up to 20V, suitable for driving most power MOSFETs and IGBTs.
3. Under-Voltage Lockout (UVLO): Ensures the IC operates only when the supply voltage is above a certain threshold, preventing damage.
4. Bootstrap Capability: Incorporates a bootstrap circuit, allowing for efficient high-side switching without complex charge pump circuits.
5. Desaturation Protection: Offers protection against overcurrent by sensing the desaturation of the driven transistor.
6. Fault Reporting: Includes fault reporting features to signal when desaturation or other faults occur.
7. Low Quiescent Current: Designed for low power consumption when not actively switching.
8. Temperature Range: Operational over a wide temperature range, typically from -40°C to +125°C, making it suitable for various industrial applications.
These features make the IRS2127STRPBF well-suited for applications requiring robust and efficient high-side switching, such as motor drives and DC-DC converters.
Pinout
1. VCC (Pin 1): Supply voltage for the IC.
2. IN (Pin 2): Logic input for controlling the gate of the MOSFET.
3. NC (Pin 3): No connection.
4. COM (Pin 4): Logic ground reference.
5. VB (Pin 5): High-side floating supply for the gate driver.
6. HO (Pin 6): High-side output, connected to the gate of the high-side MOSFET.
7. VS (Pin 7): High-side floating supply return, connected to the source of the high-side MOSFET.
8. NC (Pin 8): No connection.
The IRS2127STRPBF is used for providing efficient and reliable switching of MOSFETs in high-side applications, with features like under-voltage lockout and fast switching capabilities.