IRS2127STRPBF

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IRS2127STRPBF

+БОМ

IC GATE DRVR HIGH-SIDE 8SOIC

  • Производителькомпанией Infineon Technologies

  • Мфр. Часть #IRS2127STRPBF

  • Лист данных IRS2127STRPBF DataSheet

  • Пакет SOIC-8

  • В наличии4633

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Спецификации

Атрибут Ценность
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
DrivenConfiguration High-Side
ChannelType Single
NumberofDrivers 1
GateType IGBT, N-Channel MOSFET
Voltage-Supply 12V ~ 20V
LogicVoltage-VILVIH 0.8V, 2.5V
Current-PeakOutput(SourceSink) 290mA, 600mA
InputType Non-Inverting
HighSideVoltage-Max(Bootstrap) 600 V
Rise/FallTime(Typ) 80ns, 40ns
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Обзор

Description

The IRS2127STRPBF is an integrated circuit produced by Infineon Technologies, designed for use in power management applications. It is primarily utilized as a high-voltage, high-speed power MOSFET and IGBT driver. The device is capable of driving MOSFETs or IGBTs in half-bridge configurations and is often used in applications like motor drives, power inverters, and switch-mode power supplies.
Key features of the IRS2127STRPBF include the ability to operate with voltages up to 600V, providing robust isolation between low and high voltage components. The driver features high-speed switching capabilities, ensuring efficient power conversion and management. It also includes built-in protection features such as under-voltage lockout and shoot-through prevention, which help in safeguarding the circuit against potential faults.
The "STR" in the part number typically denotes the specific package type or configuration, which in this case is a surface-mount package suitable for automated assembly in electronic manufacturing. The device is RoHS compliant, indicating it meets environmental and safety standards.

Equivalent

The IRS2127STRPBF is a high-side gate driver IC. Equivalent products include:
1. IR2117 by Infineon Technologies
2. MIC5019 from Microchip Technology
3. FAN7382 by ON Semiconductor
4. LM5101 from Texas Instruments
These alternatives may vary slightly in specifications, so it's crucial to verify parameters like voltage ratings, current capacity, and switching speed to ensure compatibility with your application.

Features

The IRS2127STRPBF is a high-side gate driver IC designed for switching power MOSFETs and IGBTs. Key features include:
1. High-Side Gate Drive: Capable of driving high-voltage power transistors with a floating channel up to 600V.
2. Gate Drive Voltage: Provides a gate drive voltage of up to 20V, suitable for driving most power MOSFETs and IGBTs.
3. Under-Voltage Lockout (UVLO): Ensures the IC operates only when the supply voltage is above a certain threshold, preventing damage.
4. Bootstrap Capability: Incorporates a bootstrap circuit, allowing for efficient high-side switching without complex charge pump circuits.
5. Desaturation Protection: Offers protection against overcurrent by sensing the desaturation of the driven transistor.
6. Fault Reporting: Includes fault reporting features to signal when desaturation or other faults occur.
7. Low Quiescent Current: Designed for low power consumption when not actively switching.
8. Temperature Range: Operational over a wide temperature range, typically from -40°C to +125°C, making it suitable for various industrial applications.
These features make the IRS2127STRPBF well-suited for applications requiring robust and efficient high-side switching, such as motor drives and DC-DC converters.

Pinout

The IRS2127STRPBF is a high-side MOSFET gate driver IC from Infineon Technologies. It is designed to drive N-channel power MOSFETs in high-side configurations, commonly used in motor control and power conversion applications. The IRS2127STRPBF comes in an 8-pin SOIC package. Here is a brief overview of its pin functions:
1. VCC (Pin 1): Supply voltage for the IC.
2. IN (Pin 2): Logic input for controlling the gate of the MOSFET.
3. NC (Pin 3): No connection.
4. COM (Pin 4): Logic ground reference.
5. VB (Pin 5): High-side floating supply for the gate driver.
6. HO (Pin 6): High-side output, connected to the gate of the high-side MOSFET.
7. VS (Pin 7): High-side floating supply return, connected to the source of the high-side MOSFET.
8. NC (Pin 8): No connection.
The IRS2127STRPBF is used for providing efficient and reliable switching of MOSFETs in high-side applications, with features like under-voltage lockout and fast switching capabilities.

Manufacturer

The IRS2127STRPBF is manufactured by Infineon Technologies AG. Infineon is a German semiconductor company that designs, develops, manufactures, and markets a broad range of semiconductors and system solutions. The company is known for its products in areas such as automotive, industrial power control, power management, and digital security solutions. Infineon plays a significant role in the semiconductor industry by providing components that are essential for electronic devices and systems across various sectors.

Application

The IRS2127STRPBF is a high-side gate driver IC designed for various application areas. It is commonly used in motor control systems, such as industrial drives, HVAC systems, and automotive applications, where precise control of high-voltage power devices is required. It is also utilized in solar inverters, uninterruptible power supplies (UPS), and switched-mode power supplies (SMPS). Additionally, the IRS2127STRPBF is suitable for use in full-bridge and half-bridge configurations and can drive MOSFETs and IGBTs. Its robust design allows it to operate in demanding environments, making it ideal for applications that require high efficiency and reliability.

Package

The IRS2127STRPBF is an IC in a surface-mount package type, specifically a SOIC-8 (Small Outline Integrated Circuit with 8 leads).

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