IXBH42N170

Изображения являются только для ссылки

IXBH42N170

+БОМ

IGBT 1700V 80A TO-247AD

  • ПроизводительИКСИС

  • Мфр. Часть #IXBH42N170

  • В наличии4228

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Series BIMOSFET™
Part Status Active
Voltage - Collector Emitter Breakdown (Max) 1700 V
Current - Collector (Ic) (Max) 80 A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 42A
Power - Max 360 W
Input Type Standard
Gate Charge 188 nC
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AD
Base Product Number IXBH42
Current - Collector Pulsed (Icm) 300 A
Reverse Recovery Time (trr) 1.32 µs

Обзор

Description

The IXBH42N170 is a high-power N-channel MOSFET designed for applications requiring efficient switching and high performance. It features a low on-resistance, allowing for minimal power loss and improved thermal management. With a maximum drain-source voltage (Vds) of 170V and a continuous drain current (Id) of 42A, it is suitable for various applications, including power supplies, motor drives, and industrial equipment.
The device offers fast switching speeds, which enhances efficiency in high-frequency operations. Its robust construction ensures reliability in demanding environments. Additionally, the IXBH42N170 is often used in circuit designs that necessitate high voltage and current handling while maintaining thermal stability.
Overall, this MOSFET is ideal for engineers looking to optimize power performance and reliability in their designs.

Equivalent

The IXBH42N170 is a high-voltage, high-current MOSFET. Equivalent products include the Infineon IPP50R170P6, STMicroelectronics STP42NF170, and ON Semiconductor NTP42N170. Always verify specifications such as V_DS, I_D, R_DS(on), and package type to ensure compatibility.

Features

The IXBH42N170 is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: 170V maximum drain-source voltage, suitable for high-voltage applications.
2. Current Rating: 42A continuous drain current, enabling robust performance in demanding environments.
3. Low RDS(on): Offers a low on-resistance (typically around 0.14 ohms), resulting in efficient power conversion and reduced heat generation.
4. Fast Switching Speed: Capable of rapid turn-on and turn-off times, facilitating high-frequency operations.
5. Thermal Performance: Designed with a high thermal conductivity package, enhancing heat dissipation.
6. Gate-Source Voltage: Rated for ±20V, providing flexibility in driving configurations.
7. Applications: Ideal for use in DC-DC converters, power supplies, and motor control circuits.
Overall, the IXBH42N170 is a versatile component, offering reliability and efficiency in power electronics systems.

Pinout

The IXBH42N170 is an N-channel MOSFET designed for high-voltage applications. It comes in a TO-247 package, which typically has three main pins:
1. Gate (G): This pin controls the MOSFET's switching behavior. A voltage applied here turns the device on or off.
2. Drain (D): This pin is connected to the load and allows current to flow from the drain to the source when the device is on.
3. Source (S): This pin is connected to the ground or negative voltage in the circuit. It serves as the reference point for the gate-to-source voltage.
The IXBH42N170 is rated for a maximum drain-source voltage (V_DS) of 170V and can handle continuous drain currents up to 42A, making it suitable for switching applications in power electronics.

Manufacturer

The IXBH42N170 is manufactured by IXYS Corporation, which is a part of the Littelfuse family of companies as of 2018. IXYS specializes in semiconductor and power management solutions, producing a range of devices including power MOSFETs, IGBTs, and rectifiers. The company focuses on high-performance power electronics for various applications, such as industrial, automotive, and telecommunications.
IXYS is known for its innovation and expertise in power management technology, serving markets that require efficient energy conversion and control. The IXBH42N170 is a high-voltage, high-current MOSFET designed for applications that demand robust performance, such as switch-mode power supplies and motor drives. As a key player in the semiconductor industry, IXYS emphasizes quality and reliability in its products, catering to engineers and manufacturers seeking advanced solutions in power electronics.

Application

The IXBH42N170 is a high-performance N-channel MOSFET designed for various applications, primarily in power electronics. Its key application areas include:
1. Switching Power Supplies: Used in DC-DC converters and power management circuits.
2. Motor Control: Suitable for driving brushless DC (BLDC) motors in industrial and automotive applications.
3. Inverters: Employed in solar inverters and UPS systems for efficient power conversion.
4. High-Frequency Applications: Ideal for RF amplifiers and signal switching due to low gate charge and fast switching speeds.
5. LED Drivers: Utilized in lighting solutions for efficient power delivery.
Overall, it excels in applications requiring high efficiency and thermal performance.

Package

The IXBH42N170 is packaged in a TO-247 format, which is a high-power package designed for efficient heat dissipation and robust performance in high-voltage applications.

Продукты, связанные с IXBH42N170