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L6395DTR
+БОМIC GATE DRVR HALF-BRIDGE 8SO
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ПроизводительSTМикроэлектроника
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Мфр. Часть #L6395DTR
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Лист данных L6395DTR DataSheet
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В наличии9205
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| PartStatus | Active |
| DigiKeyProgrammable | Not Verified |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | IGBT, MOSFET (N-Channel) |
| Voltage-Supply | 10V ~ 20V |
| LogicVoltage-VIL,VIH | 1.1V, 1.9V |
| Current-PeakOutput(Source,Sink) | 290mA, 430mA |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 75ns, 35ns |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154", 3.90mm Width) |
| SupplierDevicePackage | 8-SOIC |
| BaseProductNumber | L6395 |
Обзор
Description
Key features often include a wide input voltage range, programmable output voltage, and thermal protection mechanisms to ensure reliable operation. The L6395DTR also supports synchronous rectification, which enhances efficiency by minimizing power loss during conversion.
Its compact package and high integration level make it suitable for space-constrained designs, while its robust performance ensures it meets the demands of both industrial and consumer electronics. Overall, the L6395DTR is a versatile solution for engineers looking to optimize power delivery in their electronic systems.
Equivalent
Features
1. High Voltage Capability: Operates with a supply voltage range of up to 600V.
2. High-Peak Current Output: Provides a peak output current of up to 2A, suitable for efficient MOSFET switching.
3. Bootstrap Functionality: Supports bootstrap operation for driving high-side MOSFETs, enhancing efficiency in half-bridge configurations.
4. Fast Switching: Optimized for rapid switching events, reducing switching losses and improving overall performance.
5. Integrated Protection Features: Includes features like under-voltage lockout (UVLO) to protect the device and the connected MOSFETs.
6. Small Package Size: Available in a compact SO-8 package, facilitating space-saving designs.
These features make the L6395DTR ideal for applications requiring robust MOSFET driving capabilities with high efficiency and reliability.
Pinout
### Pinout and Functions:
1. VCC (Pin 1): Supply voltage for the driver; connects to the positive power supply.
2. GND (Pin 2): Ground reference for the IC.
3. VS (Pin 3): Source voltage for the high-side driver; typically connected to the source of the high-side MOSFET.
4. HO (Pin 4): High-side output; drives the gate of the high-side MOSFET.
5. LO (Pin 5): Low-side output; drives the gate of the low-side MOSFET.
6. COM (Pin 6): Common connection for the low-side driver.
7. CSN (Pin 7): Current sense negative input; used for fault detection.
8. CSP (Pin 8): Current sense positive input; also for fault detection.
This IC is designed to provide robust performance in demanding applications.