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MT29F4G08ABAEAWP:E
+БОМIC FLASH 4GBIT PARALLEL 48TSOP I
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ПроизводительКомпания Micron Technology Inc.
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Мфр. Часть #MT29F4G08ABAEAWP:E
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В наличии4565
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Part Status | Obsolete |
| Base Product Number | MT29F4G08 |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 4Gbit |
| Memory Organization | 512M x 8 |
| Memory Interface | Parallel |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP I |
| Packaging | Tray |
Обзор
Description
Key features include fast read and write speeds, low power consumption, and high durability, making it suitable for applications requiring reliable data storage. The chip is part of Micron's broader NAND flash portfolio, which supports various interfaces and form factors to accommodate different technological needs. It is often used in conjunction with microcontrollers or memory controllers to ensure seamless data management and access.
Due to its robust performance and adaptability, the MT29F4G08ABAEAWP:E is a popular choice for manufacturers looking to enhance their devices' storage capabilities while maintaining energy efficiency and cost-effectiveness.
Equivalent
1. Samsung K9K4G08U0D
2. Toshiba TC58NVG2S3HTA00
3. Hynix H27U4G8F2BTR
These alternatives match in terms of memory capacity, architecture, and interface, making them suitable replacements in applications where the Micron chip is used. Always verify compatibility with your specific application requirements.
Features
The device operates with a typical page size of 2,112 bytes and a block size of 128 kilobytes plus spare area. It features fast read and program times, enhancing data throughput and performance. The chip is designed for industrial applications with an operating temperature range of -40°C to +85°C.
Additional features include advanced error correction code (ECC) support, wear-leveling algorithms, and bad block management to maintain data integrity and longevity. The MT29F4G08ABAEAWP:E is suitable for use in embedded systems, consumer electronics, and industrial applications where high endurance and reliable performance are required.
Pinout
- Power Supply: VCC and VSS pins provide power to the chip.
- Data I/O: I/O pins (typically 8 pins for this type of NAND) are used for data input and output operations.
- Control Signals:
- CE# (Chip Enable): Activates the chip.
- WE# (Write Enable): Controls write operations.
- RE# (Read Enable): Controls read operations.
- ALE (Address Latch Enable): Used for latching addresses.
- CLE (Command Latch Enable): Used for latching commands.
- Write Protection: WP# (Write Protect) prevents writing to the memory.
- Ready/Busy: R/B# (Ready/Busy) indicates the chip's operational status.
- Other: Some pins might be reserved for specific functions or future use.
These pins enable the device to store and retrieve data, interface with the system, and perform memory operations efficiently. For precise configuration and usage, refer to the official datasheet of the device.
Manufacturer
Founded in 1978 and headquartered in Boise, Idaho, Micron has grown to become one of the leading memory manufacturers globally. The company is recognized for its innovation in memory and storage solutions, playing a crucial role in the development of new technologies like 3D NAND and advanced DRAM products. Micron's products are critical for a wide array of applications, including data centers, personal computing, mobile devices, and emerging areas like artificial intelligence and autonomous vehicles.
Overall, Micron is a key player in the semiconductor industry, contributing significantly to advancements in memory technology that drive performance improvements and support the ever-increasing data needs of modern applications and services.
Application
1. Consumer Electronics: Used in smartphones, tablets, and digital cameras for data storage.
2. Computing: Provides storage solutions for laptops and desktops.
3. Industrial: Employed in industrial automation systems and equipment requiring robust storage.
4. Automotive: Supports infotainment systems and advanced driver-assistance systems (ADAS).
5. Networking: Utilized in routers and network devices for firmware and configuration storage.
6. Embedded Systems: Suitable for use in IoT devices and embedded applications requiring compact storage solutions.
Package
Frequently Asked Questions
Q: What is the memory capacity and organization of the MT29F4G08ABAEAWP:E?
A: It is a 4Gbit NAND Flash memory organized as 512M x 8 bits, suitable for high-density data storage.
Q: What voltage range does this device require for operation?
A: It operates with a supply voltage between 2.7V and 3.6V, making it compatible with standard 3.3V systems.
Q: Is this component supported for new designs given its Obsolete status?
A: No, as the Part Status is Obsolete, it is not recommended for new designs; it is best suited for legacy system maintenance or replacement.
Q: What interface does this NAND Flash use for data transfer?
A: It uses a Parallel memory interface, which is common in legacy embedded and consumer applications.
Q: What is the operating temperature range for this device?
A: The specified operating temperature range is 0°C to 70°C (TA), suitable for commercial or indoor environments.
Q: What package type does the MT29F4G08ABAEAWP:E come in?
A: It is supplied in a 48-TFSOP package (0.724", 18.40mm Width) and the supplier device package is 48-TSOP I.
Q: Is the memory volatile or non-volatile?
A: It is Non-Volatile memory, meaning data is retained even when power is removed, ideal for firmware and data logging.
Q: What is the mounting type for this component?
A: The mounting type is Surface Mount, allowing for automated assembly on modern PCB designs.
