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Спецификации
| Атрибут | Ценность |
| Supplier | Micron Technology Inc. |
| Package / Case | Tray |
| Part Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR4 |
| Memory Size | 4Gb (1G x 4) |
| Memory Interface | Parallel |
| Clock Frequency | 1.2 GHz |
| Voltage - Supply | 1.14V ~ 1.26V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
Обзор
Description
MT40A1G4RH-083E:B is a Micron DDR3 SDRAM memory device. It provides 1 Gbit of memory in an x4 data-width per device (1 Gb total per chip). The “-083E” speed grade indicates DDR3 performance up to about 1066 MT/s, with a nominal 1.5 V supply. Features typically include multi-bank (eight banks), 8n prefetch, and a synchronous interface. The “-B” suffix usually denotes a RoHS-compliant/packaging variant. In systems, multiple such devices are mounted to form wider buses (e.g., 64-bit modules). This chip is used as part of memory subsystems on PCBs or DIMMs; for exact timings, voltage, package options, and electrical specs, consult the Micron MT40A1G4RH-083E:B datasheet.
Equivalent
MT40A1G4RH-083E:B is a Micron DDR3L SDRAM with 1Gbit x 4 organization (4Gbit total), typically DDR3L-1066/1333 at 1.35V, unbuffered. Equivalents are other vendors’ DDR3L SDRAMs with the same 1G×4 organization and same speed/voltage. To get exact cross-references, use Micron’s cross-reference tool or DigiKey/Mouser by searching for 1G×4, DDR3L, and the speed (1066/1333 MT/s). Provide speed/voltage for precise substitutes.
Features
Here are typical features for Micron MT40A1G4RH-083E:B (DDR3 SDRAM device):
- 1 Gbit density per device, x4 data width (1Gx4)
- DDR3 SDRAM, fully synchronous with 8-bank organization
- 8n prefetch, burst lengths BL4/BL8
- Operating voltage: 1.5 V (DDR3) with DDR3L variants available (1.35 V)
- Data rates up to ~1333 MT/s (speed grade dependent)
- Auto-refresh, partial array self-refresh, deep power-down support
- Packaging: FBGA (ball grid array) package
- Temperature options include industrial grade (-40°C to 85°C)
- RoHS compliant; ZQ calibration/other standard DDR3 features
Note: exact speed, voltage and temperature options depend on the specific lot/variant; consult the datasheet for precise specs.
- 1 Gbit density per device, x4 data width (1Gx4)
- DDR3 SDRAM, fully synchronous with 8-bank organization
- 8n prefetch, burst lengths BL4/BL8
- Operating voltage: 1.5 V (DDR3) with DDR3L variants available (1.35 V)
- Data rates up to ~1333 MT/s (speed grade dependent)
- Auto-refresh, partial array self-refresh, deep power-down support
- Packaging: FBGA (ball grid array) package
- Temperature options include industrial grade (-40°C to 85°C)
- RoHS compliant; ZQ calibration/other standard DDR3 features
Note: exact speed, voltage and temperature options depend on the specific lot/variant; consult the datasheet for precise specs.
Pinout
- Pin count: 60-ball BGA pins
- Function: Mobile DDR3L SDRAM, 1 Gbit capacity organized as x4 data width (memory device).
- Function: Mobile DDR3L SDRAM, 1 Gbit capacity organized as x4 data width (memory device).
Manufacturer
- Manufacturer: Micron Technology, Inc.
- What kind of company: A global American semiconductor company that designs, manufactures, and sells memory and storage solutions (DRAM, NAND, etc.). HQ in Boise, Idaho; one of the world's largest memory manufacturers.
- What kind of company: A global American semiconductor company that designs, manufactures, and sells memory and storage solutions (DRAM, NAND, etc.). HQ in Boise, Idaho; one of the world's largest memory manufacturers.
Application
MT40A1G4RH-083E:B is a mobile/low-power DRAM. Applications include main memory in mobile and embedded systems. Typical uses: smartphones and tablets, portable media players, digital cameras and camcorders, set-top boxes, embedded control units, and thin/ultrabook notebooks. Suitable for other space-constrained devices requiring high-density memory and low power.
Package
A 96‑ball Fine-Pitched FBGA (FBGA-96) package.
