Изображения являются только для ссылки
MT40A256M16GE-075E:B
+БОМIC DRAM 4GBIT PARALLEL 96FBGA
-
ПроизводительКомпания Micron Technology Inc.
-
Мфр. Часть #MT40A256M16GE-075E:B
-
В наличии8411
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Part Status | Obsolete |
| Base Product Number | MT40A256M16 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR4 |
| Memory Size | 4Gbit |
| Memory Organization | 256M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 1.33 GHz |
| Voltage - Supply | 1.14V ~ 1.26V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package | 96-TFBGA |
| Supplier Device Package | 96-FBGA (9x14) |
| Packaging | Tray |
Обзор
Description
The "075" in the part number indicates a speed grade, meaning it is rated for operation at a maximum frequency of 2400 MHz. The "E" denotes that it belongs to Micron's E-series, which is designed for energy efficiency. This DRAM is commonly used in various electronic devices, including laptops, desktops, and servers, providing fast and reliable memory solutions for multitasking and demanding applications. The chip also features various thermal and operational reliability enhancements, making it suitable for both consumer and enterprise environments.
Equivalent
1. Hynix H5TQ2G83CFR-12C
2. Samsung K4B4G0846D-BY1
3. Micron MT41K256M16HA-125
Always verify the specifics like speed, timing, and voltage for compatibility in your application.
Features
- Type: DDR3 SDRAM
- Density: 4 Gb (Gigabits) per chip
- Organization: 256 Meg x 16 bits
- Speed: Operates at 1333 MT/s (million transfers per second) with a data rate of 800 MHz.
- Voltage: Operates at a supply voltage of 1.5V.
- Package Type: Available in a 78-ball TFBGA (Thin Fine Ball Grid Array) package.
- Compatibility: Suitable for various applications including consumer electronics, networking, and industrial devices.
- Latency: Generally offers a CAS latency (CL) of 9.
- Features: Supports various power-saving modes and includes features for improved reliability and performance.
This chip is designed for applications requiring moderate memory capacity and a balance between performance and power consumption.
Pinout
Key functions of the pinout include:
- Data lines (DQ): 16 pins for bi-directional data transfer.
- Address lines (A): Used for row and column addressing.
- Control signals: Control pins such as Chip Select (CS), Clock (CK, CK#), and Write Enable (WE) are included to manage the operation and timing of the memory.
- Configuration pins: These include VDD and VSS for power supply and ground connections, as well as other control signals specific to its operation.
This chip is typically used in various applications requiring efficient and high-speed memory solutions in computing and embedded systems.
Manufacturer
Founded in 1978 and headquartered in Boise, Idaho, Micron has established itself as one of the largest memory manufacturers worldwide. The company focuses on innovation and technology advancement in memory and storage solutions, catering to the increasing demand for data-intensive applications in the digital age. Micron’s commitment to research and development positions it as a key player in the ever-evolving semiconductor landscape.
Application
1. Computers and Laptops: Enhancing system performance and multitasking capabilities.
2. Networking Equipment: Providing memory for routers, switches, and servers.
3. Mobile Devices: Supporting operations in smartphones and tablets.
4. Consumer Electronics: Used in smart TVs, gaming consoles, and other digital devices.
5. Industrial Applications: Employed in automation systems and IoT devices for data processing.
Its high-speed operation and efficiency make it suitable for both consumer and industrial applications.
Package
Frequently Asked Questions
Q: What is the memory capacity and organization of the MT40A256M16GE-075E:B?
A: It offers 4Gbit density organized as 256M x 16, ideal for high-bandwidth DRAM applications.
Q: What is the maximum clock frequency and interface type?
A: It supports a 1.33 GHz clock frequency with a parallel interface, enabling fast SDRAM - DDR4 data transfer.
Q: What is the operating voltage range for this DDR4 memory?
A: It operates from 1.14V to 1.26V, ensuring low power consumption for standard DDR4 applications.
Q: What is the operating temperature range of this component?
A: It operates from 0°C to 95°C (TC), suitable for commercial and industrial environments.
Q: What package type does the MT40A256M16GE-075E:B use?
A: It comes in a 96-TFBGA (9x14mm) surface-mount package, optimized for space‑constrained designs.
Q: Is this memory volatile or non-volatile?
A: It is volatile DRAM, requiring continuous power to retain data, typical for DDR4 SDRAM.
Q: What is the supply voltage tolerance for reliable operation?
A: The supply voltage range is 1.14V to 1.26V, providing robust tolerance for stable DDR4 performance.
Q: Is this component still in active production or obsolete?
A: The part status is marked as Obsolete; verify availability with distributors for legacy or replacement designs.