NCE65T180F

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NCE65T180F

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  • ПроизводительWuxi NCE Power Semiconductor

  • Мфр. Часть #NCE65T180F

  • Лист данных NCE65T180F DataSheet

  • В наличии28874

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Спецификации

Атрибут Ценность
Manufacturer Wuxi NCE Power Semiconductor
Package / Case TO-220F-3
Current - Continuous Drain(Id) 21A
Pd - Power Dissipation 33.8W
Drain to Source Voltage (Vdss) 650V
Rds(on) 180mΩ@10V,10.5A
Gate Threshold Voltage (Vgs(th) @ Id) 4V
Type 1 N-channel

Обзор

Description

The NCE65T180F is a high-performance N-channel MOSFET from ON Semiconductor, designed for power management applications. Key features include:
- Voltage Rating: 650V
- Current Rating: 18A (continuous)
- Low On-Resistance (RDS(on)): 180mΩ (typ.)
- Fast Switching: Optimized for efficiency in high-frequency circuits
- Package: TO-220F (isolated tab for better thermal performance)
Ideal for switching power supplies, motor control, and industrial inverters, it offers robust performance with low conduction losses. Its avalanche-rated design ensures reliability in harsh conditions.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the NCE65T180F (650V, 180mΩ SiC MOSFET) include:
- C3M0065090D (Wolfspeed)
- SCT3060AL (ROHM)
- IDH20G65C5 (Infineon)
- STL180N65F5 (STMicroelectronics)
These alternatives offer similar voltage, RDS(on), and SiC technology. Verify datasheets for exact compatibility.

Pinout

The NCE65T180F is a 650V, 180A IGBT module designed for high-power applications like motor drives and inverters.
- Pin Count: Typically 4 main terminals (Collector, Emitter, Gate, and sometimes an auxiliary Emitter for Kelvin sensing). Exact count may vary by package (e.g., 7–12 pins including auxiliary/sensing pins).
- Functions:
- High-current switching (180A rated).
- Low VCE(sat) for reduced conduction losses.
- Fast switching with robust thermal performance.
- Isolated baseplate for simplified heatsink mounting.
Check the datasheet for precise pinout and package details (e.g., 62mm or 34mm module variants).

Manufacturer

The NCE65T180F is a 650V, 180A silicon carbide (SiC) MOSFET manufactured by Nexperia, a subsidiary of Wingtech Technology.
Nexperia is a Dutch semiconductor company specializing in high-performance discrete components, logic, and MOSFETs, with a strong focus on automotive, industrial, and power applications. Originally part of NXP Semiconductors, it became independent in 2017 and was later acquired by Wingtech (China) in 2019.
The company is known for efficient, reliable power devices, including SiC MOSFETs like the NCE65T180F, which target high-power, high-frequency applications such as EV charging and renewable energy systems.

Application

The NCE65T180F is a high-performance N-channel MOSFET designed for power management applications. Key areas include:
1. Switching Power Supplies – Used in DC-DC converters and AC-DC adapters.
2. Motor Control – Efficiently drives motors in industrial and automotive systems.
3. Solar Inverters – Enhances energy conversion in photovoltaic systems.
4. Battery Management – Protects and controls power in Li-ion and other battery packs.
5. LED Lighting – Supports high-efficiency LED drivers.
Its low on-resistance and fast switching make it ideal for high-power, high-frequency applications.

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