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NTMFS4C10NBT1G
+БОМMOSFET N-CH 30V 16.4A/46A 5DFN
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ПроизводительОнсеми
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Мфр. Часть #NTMFS4C10NBT1G
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В наличии9305
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 16.4A (Ta), 46A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 6.95mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18.6 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 987 pF @ 15 V |
| Power Dissipation (Max) | 2.51W (Ta), 23.6W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Base Product Number | NTMFS4 |
Обзор
Description
The device is housed in a TO-220 package, which facilitates effective thermal dissipation. Its robust design allows for reliable operation in demanding environments. Key specifications include a maximum gate-source voltage of ±20V, making it compatible with standard gate drive circuits.
NTMFS4C10NBT1G is favored in scenarios where space and thermal management are critical, enabling compact designs with high power efficiency. Always refer to the manufacturer's datasheet for detailed electrical characteristics and thermal management guidelines for optimal application performance.
Equivalent
Features
1. Voltage Rating: Supports a maximum drain-source voltage (Vds) of 40V, suitable for low to medium voltage applications.
2. Current Rating: Handles continuous drain current (Id) of up to 10A, accommodating a range of load demands.
3. Low Rds(on): Offers a low on-resistance (Rds(on)) of around 10mΩ, enhancing efficiency by minimizing power loss during operation.
4. Fast Switching: Designed for rapid switching capabilities, making it ideal for applications like power management and DC-DC converters.
5. Thermal Performance: Features a high junction-to-ambient thermal resistance, ensuring stable operation under thermal stress.
6. Package Type: Available in a compact SO-8 package, facilitating easy integration into circuit designs.
7. RoHS Compliant: Meets environmental regulations, promoting eco-friendly electronics.
These attributes make the NTMFS4C10NBT1G suitable for applications in power supplies, motor drives, and automotive systems.
Pinout
The pin configuration and their typical functions are as follows:
1. Gate (G): Controls the MOSFET operation; when a voltage is applied, it turns the device on.
2. Drain (D): The output terminal where current flows out when the MOSFET is on.
3. Source (S): The terminal through which current enters the MOSFET.
In the package, the remaining pins are typically used for thermal and mounting purposes, depending on the specific package type (e.g., TO-220, DPAK). This MOSFET is notable for its low R_DS(on) and fast switching capabilities, making it suitable for applications like power management and DC-DC converters.
For detailed specifications, please refer to the manufacturer's datasheet.