NTRV4101PT1G

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NTRV4101PT1G

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MOSFET P-CH 20V 1.8A SOT23-3

  • ПроизводительОнсеми

  • Мфр. Часть #NTRV4101PT1G

  • Лист данных NTRV4101PT1G DataSheet

  • В наличии18657

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Supplier onsemi
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain(Id) @ 25°C 1.8A (Ta)
Drive Voltage(Max Rds On Min Rds On) 1.8V, 4.5V
Rds On(Max) @ Id Vgs 85mOhm @ 1.6A, 4.5V
Vgs(th)(Max) @ Id 1.2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 8.5 nC @ 4.5 V
Vgs(Max) ±8V
Input Capacitance(Ciss)(Max) @ Vds 675 pF @ 10 V
Power Dissipation (Max) 420mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)

Обзор

Description

The NTRV4101PT1G is a part of a series of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) devices designed for a variety of electronic applications. It is manufactured by ON Semiconductor, known for producing reliable semiconductor components. This particular MOSFET is a dual N-channel device, meaning it contains two N-channel MOSFETs in a single package, which is beneficial for applications requiring compact designs and efficient power management.
Key features of the NTRV4101PT1G include low on-resistance and fast switching speed, which enhance its efficiency and performance in power conversion tasks. It is typically used in applications like load switching, power management, and DC-DC converters. The device is available in a compact package, making it suitable for space-constrained environments. It is designed to handle a specific range of voltages and currents, making it vital to consult its datasheet for detailed electrical characteristics and maximum ratings to ensure proper usage and to avoid device failure.

Equivalent

The NTRV4101PT1G is a dual P-channel MOSFET. Equivalent products can include:
1. AO3401A by Alpha & Omega Semiconductor
2. SI2333DS by Vishay
3. IRF7319 by Infineon Technologies
4. FDG6320C by ON Semiconductor
These alternatives have similar specifications but always verify the datasheets to ensure compatibility in your specific application.

Features

The NTRV4101PT1G is a N-Channel MOSFET designed by ON Semiconductor. Key features include:
1. Voltage and Current Ratings: It operates with a drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) of 4.0A at 25°C, making it suitable for low-voltage applications.
2. Low On-Resistance: The MOSFET has a low R_DS(on) of about 37mΩ, which ensures efficient switching and low power loss.
3. Fast Switching Speed: This feature minimizes energy loss and heat generation during operation, improving overall efficiency.
4. Package: It is housed in a compact SOT-23 package, ideal for space-constrained applications.
5. Thermal Performance: The device offers good thermal performance, with an efficient thermal resistance junction-to-case to help manage heat dissipation.
6. Applications: Ideal for use in load switching, DC-DC converters, and power management in portable devices.
These features make the NTRV4101PT1G a versatile choice for compact, high-efficiency electronic designs.

Pinout

The NTRV4101PT1G is a MOSFET device. It comes in a compact SOT-23 package, which typically has 3 pins. The pin configuration and functions for this MOSFET are as follows:
1. Pin 1 (Gate): This is the control terminal used to trigger the MOSFET. By applying a voltage to the gate, the conductive channel between the drain and source is either enhanced or depleted, allowing or stopping the flow of current.
2. Pin 2 (Source): This is the terminal through which the current enters the MOSFET. It is typically connected to the ground or the lower potential in the circuit.
3. Pin 3 (Drain): The terminal through which the current exits the MOSFET. It is usually connected to the load or the higher potential in the circuit.
The NTRV4101PT1G is designed for switching and amplification applications, providing efficient power management in compact electronic devices due to its small package size and MOSFET characteristics.

Manufacturer

The NTRV4101PT1G is manufactured by ON Semiconductor, now known as onsemi. Onsemi is a prominent American semiconductor supplier company that focuses on the design and manufacturing of a wide range of semiconductor components. These components are used in various applications such as automotive, industrial, communications, computing, and consumer electronics.
Onsemi provides solutions that help engineers and designers improve energy efficiency, increase performance, and reduce costs. The company's product portfolio includes power and signal management, logic, discrete, and custom devices. Onsemi's offerings are crucial in developing systems that are more efficient, reliable, and adaptable to changing technological demands.
The company is known for its focus on sustainability and energy-efficient innovations, supporting global initiatives for greener technologies. Onsemi operates globally, providing comprehensive support and services to its customers, thus playing a key role in the supply chain for electronic devices worldwide.

Application

The NTRV4101PT1G is a MOSFET commonly used in various electronic applications. Key application areas include:
1. Power Management: Utilized in DC-DC converters for efficient power regulation and energy management.
2. Switching Circuits: Applied in high-speed switching applications due to low on-resistance and fast switching times.
3. Load Switching: Used for controlling power to different loads in electronic devices.
4. Motor Control: Employed in motor driver circuits for controlling small motors efficiently.
5. Battery Protection: Integrated in circuits for safeguarding batteries by managing charging and discharging cycles.
Its versatility and efficiency make it suitable for consumer electronics, industrial applications, and automotive systems.

Package

The NTRV4101PT1G is packaged in a SOT-23 package type, which is a small, surface-mount, three-terminal transistor outline commonly used for discrete semiconductor components.

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