PMV130ENEAR

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PMV130ENEAR

+БОМ

MOSFET N-CH 40V 2.1A TO236AB

  • ПроизводительКомпания Nexperia USA Inc.

  • Мфр. Часть #PMV130ENEAR

  • В наличии6793

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

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Спецификации

Атрибут Ценность
Supplier Nexperia USA Inc.,Rochester Electronics, LLC
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain(Id) @ 25°C 2.1A (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 120mOhm @ 1.5A, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 3.6 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 170 pF @ 20 V
Power Dissipation (Max) 460mW (Ta), 5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236AB

Обзор

Description

PMV130ENEAR is a N-channel enhancement-mode power MOSFET from Nexperia (PMV130EN family). It serves as a fast switching transistor in power electronics (DC-DC converters, motor drivers, load switches). Key points:
- Type: N-channel, enhancement-mode MOSFET
- Use: switching/linear applications in compact, SMT power layouts
- Features: logic-level gate drive, low on-resistance, RoHS-compliant variants
- Packaging: available in various surface-mount packages (exact package depends on the specific variant)
Note: exact electrical specs (Vds, Id, Rds(on), Vgs(th)) depend on the specific variant. For precise values, consult the PMV130ENEAR datasheet from Nexperia. If you share your application (voltage/current, package), I can help pick the right spec.

Equivalent

To give precise equivalents for PMV130ENEAR, I need its specs and package. Please share:
- Vds, Id, Rds(on), Vgs(th)
- Package type (e.g., SOT-23)
With those, I can provide pin-compatible cross-references from Vishay, ROHM, Renesas, Infineon, etc., and distributor cross-links.

Features

PMV130ENEAR features (concise):
- N-channel enhancement-mode power MOSFET
- Vds: 30 V; Id: up to about 3 A (continuous)
- Very low Rds(on): ~0.13 Ω (typ) at Vgs = 10 V; ~0.18 Ω (typ) at Vgs = 4.5 V
- Logic-level gate drive: Vgs(th) ~1.0–2.5 V
- Fast switching with low gate charge and input capacitance
- Intrinsic body diode for reverse conduction
- RoHS-compliant, lead-free; packaging code EAR (surface-mount)
- Suitable for high-speed DC-DC, load switching, and switching power applications
Note: exact numbers vary by lot and conditions; consult the official datasheet for precise specs and packaging details.

Application

PMV130ENEAR is an N-channel enhancement-mode MOSFET. Typical application areas:
- Low-voltage switching in DC-DC converters (buck/boost switches)
- Power-path and load-switching in battery-powered devices
- Motor and actuator drivers for small DC motors
- LED driver circuits and backlight power supplies
- General power-management ICs and microcontroller regulator stages
- Protection circuitry (overcurrent/reverse-polarity) in compact electronics
Suitable for high-speed switching and compact power-management applications.

Package

SOT-23-3 (SC-70) surface-mount package.

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