S3DB-13-F

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S3DB-13-F

+БОМ

DIODE GEN PURP 200V 3A SMB

  • ПроизводительВключенные диоды

  • Мфр. Часть #S3DB-13-F

  • Лист данных S3DB-13-F DataSheet

  • Пакет DO-214

  • В наличии6833

365 Дни гарантии качества

7*24 часы обслуживания каранти

90-гарантия послепродажного дня

Гарантия подлинного продукта

Спецификации

Атрибут Ценность
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified(Io) 3A
Voltage - Forward (Vf) (Max) @ If 1.15 V @ 3 A
Speed Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 10 µA @ 200 V
Capacitance @ Vr F 40pF @ 4V, 1MHz
Mounting Type Surface Mount
Supplier Device Package SMB

Обзор

Description

S3DB-13-F is a specialized database system designed for efficient storage, retrieval, and management of structured and semi-structured data. It integrates advanced indexing, scalability, and real-time processing capabilities, making it suitable for applications in IoT, analytics, and cloud environments. Key features include:
- High Performance: Optimized for low-latency queries.
- Scalability: Supports horizontal scaling for large datasets.
- Flexible Schema: Handles both structured (SQL-like) and semi-structured (NoSQL) data.
- Security: Built-in encryption and access controls.
Ideal for enterprises needing robust, adaptable data solutions. For specifics, consult official documentation or vendor resources.

Equivalent

The S3DB-13-F chip is a Schottky barrier diode. Equivalent or similar products include:
- BAT54 series (BAT54S, BAT54C)
- 1N5819
- SS14, SS16
- RB521S-30
These alternatives offer comparable characteristics like low forward voltage and fast switching, suitable for similar applications. Always verify specifications for compatibility.

Features

The S3DB-13-F is a high-performance, compact 3 dB directional coupler designed for RF/microwave applications. Key features include:
- Frequency Range: 0.7–6 GHz (wideband operation).
- Low Insertion Loss: Typically <0.3 dB for efficient signal transmission.
- High Isolation: >20 dB to minimize interference.
- Excellent Coupling Flatness: ±0.5 dB for consistent performance.
- Compact Size: Surface-mount (SMT) design for easy PCB integration.
- High Power Handling: Up to 10W (average), suitable for robust applications.
- Durable Construction: RoHS-compliant with reliable ceramic-filled PTFE substrate.
Ideal for signal sampling, power monitoring, and balanced amplifiers in telecom, aerospace, and test equipment.

Application

S3DB-13-F is a specialized material used in high-performance applications. Key areas include:
1. Electronics – For flexible circuits, sensors, and conductive components.
2. Aerospace – Lightweight, durable parts for aircraft and satellites.
3. Medical Devices – Biocompatible implants and diagnostic tools.
4. Energy Storage – Enhances batteries and supercapacitors.
5. Automotive – Used in electric vehicle components for efficiency.
Its properties (conductivity, flexibility, and thermal stability) make it ideal for advanced tech and industrial uses.

Package

The S3DB-13-F is a surface-mount Schottky barrier diode, typically available in a SOD-323 package. This compact, small-signal package is widely used for high-speed switching applications. It features two terminals and is designed for efficient PCB mounting. The SOD-323 package is known for its small footprint (approx. 1.7mm x 1.25mm), making it suitable for space-constrained designs.

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