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SI7463DP-T1-E3
+БОМMOSFET P-CH 40V 11A PPAK SO-8
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ПроизводительVishay Силиконикс
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Мфр. Часть #SI7463DP-T1-E3
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Лист данных SI7463DP-T1-E3 DataSheet
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Пакет PowerPAK-SO-8
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В наличии2775
365 Дни гарантии качества
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Спецификации
| Атрибут | Ценность |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 11A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 9.2mOhm @ 18.6A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 140 nC @ 10 V |
| Vgs(Max) | ±20V |
| PowerDissipation(Max) | 1.9W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® SO-8 |
Обзор
Equivalent
- IRLML6402 (Infineon)
- AO3401 (Alpha & Omega)
- FDC5612P (Fairchild/ON Semi)
- DMG2305UX (Diodes Inc.)
These alternatives offer similar specs (e.g., -20V, -4.3A, low RDS(on)). Verify pinout and parameters for compatibility.
Pinout
Key Functions:
- Drain (D), Source (S), Gate (G): Standard MOSFET terminals (multiple pins for D and S for lower RDS(on)).
- Logic-Level Gate Drive: Compatible with 4.5V drive.
- Low On-Resistance (RDS(on)): Optimized for power efficiency.
- High Current Handling: Suitable for load switching applications.
Pinout (Typical SO-8):
- Pins 1, 2, 3, 4: Source (S)
- Pins 5, 6, 7, 8: Drain (D)
- Gate (G) is internally connected (check datasheet for exact configuration).
Applications: Power management, load switching, and DC-DC conversion.
For exact pin mapping, refer to the datasheet (Vishay/Siliconix).
Manufacturer
Vishay is known for producing high-performance discrete semiconductors, including MOSFETs, diodes, and optoelectronics, as well as resistors, capacitors, and inductors. The company serves industries like automotive, industrial, computing, and consumer electronics.
The SI7463DP-T1-E3 is part of Vishay’s TrenchFET® power MOSFET series, offering low on-resistance and high efficiency for power management applications.