SIS443DN-T1-GE3

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SIS443DN-T1-GE3

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MOSFET P-CH 40V 35A PPAK 1212-8

365 Дни гарантии качества

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90-гарантия послепродажного дня

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Спецификации

Атрибут Ценность
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 35A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 11.7mOhm @ 15A, 10V
Vgs(th)(Max)@Id 2.3V @ 250µA
GateCharge(Qg)(Max)@Vgs 135 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4370 pF @ 20 V
PowerDissipation(Max) 3.7W (Ta), 52W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® 1212-8

Обзор

Description

The SIS443DN-T1-GE3 is a N-channel MOSFET from Vishay Siliconix, designed for high-efficiency power applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 4.3 mΩ at 10V, reducing conduction losses.
- High Current Handling: Supports up to 100A continuous drain current.
- Voltage Rating: 30V, suitable for DC-DC converters, motor control, and power management.
- Advanced Packaging: PowerPAK® SO-8, optimizing thermal performance and board space.
- Fast Switching: Enhances efficiency in high-frequency applications.
Ideal for synchronous rectification, load switching, and battery protection in automotive, industrial, and consumer electronics. Its robust design ensures reliability under demanding conditions.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the SIS443DN-T1-GE3 (a Vishay P-channel MOSFET) include:
- Si4435DY-T1-GE3 (Similar specs, same package)
- IRF7416PBF (Infineon, comparable ratings)
- FDS4435BZ (Fairchild, alternative P-MOSFET)
- AO3401 (Alpha & Omega, lower current but compatible in some apps)
Check datasheets for exact parameter matching.

Features

The SIS443DN-T1-GE3 is a N-channel MOSFET by Vishay Siliconix with the following key features:
- Voltage Rating: 30V
- Current Rating: 140A (pulsed) / 100A (continuous)
- Low On-Resistance (RDS(on)): 1.7mΩ (max at VGS=10V)
- Gate Charge (Qg): 120nC (typical)
- Fast Switching: Optimized for high-efficiency power applications
- Package: PowerPAK® SO-8 (compact, surface-mount design)
- Applications: Power management, DC-DC converters, motor control, and battery protection
Designed for high-current, low-loss switching, it’s ideal for automotive, industrial, and computing systems.

Pinout

The SIS443DN-T1-GE3 is a N-channel MOSFET in a DFN-5 (5-pin) package.
Pin Functions:
1. Gate (G) – Controls the switching.
2. Drain (D1, D2) – Two pins for drain connection (internally linked).
3. Source (S1, S2) – Two pins for source connection (internally linked).
Key Features:
- 30V drain-source voltage (VDS)
- Low on-resistance (RDS(on)) for efficient power handling.
- Designed for power management in applications like DC-DC converters and load switches.
The dual-drain and dual-source pins improve thermal performance and current handling.

Package

The SIS443DN-T1-GE3 is a DFN-8 (3x3) package type. It is a compact, surface-mount PowerPAK® dual flat no-lead package measuring 3mm x 3mm, designed for efficient power dissipation in power MOSFET applications. Its small footprint and low-profile design make it suitable for space-constrained PCB layouts.

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