SISS27DN-T1-GE3

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SISS27DN-T1-GE3

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MOSFET P-CH 30V 50A PPAK 1212-8S

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Спецификации

Атрибут Ценность
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 50A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 5.6mOhm @ 15A, 10V
Vgs(th)(Max) @ Id 2.2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 140 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 5250 pF @ 15 V
Power Dissipation (Max) 4.8W (Ta), 57W (Tc)
Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S

Обзор

Description

The SISS27DN-T1-GE3 is a N-channel MOSFET from Vishay Siliconix, designed for high-efficiency power management in applications like DC-DC converters, load switches, and motor control.
### Key Features:
- Voltage Rating: 30V
- Current Rating: 27A (continuous)
- Low On-Resistance (RDS(on)): 4.5mΩ (max) at 10V VGS
- Fast Switching: Optimized for high-frequency operation
- Package: PowerPAK® SO-8 (compact, thermally efficient)
- AEC-Q101 Qualified: Suitable for automotive applications
### Applications:
- Power supplies (synchronous rectification)
- Battery management
- Motor drives
- Industrial & automotive systems
This MOSFET offers low conduction losses, high current handling, and robust thermal performance, making it ideal for space-constrained, high-power designs.

Equivalent

Equivalent products to the SISS27DN-T1-GE3 (Vishay SiS27DN dual N-channel MOSFET) include:
- SiS452DN-T1-GE3 (Similar specs, Vishay)
- SiS414DN-T1-GE3 (Lower Rds(on), Vishay)
- DMN2014UFG (Diodes Inc.)
- BSS138 (Fairchild/ON Semi, lower current)
Check datasheets for exact parameter matching.

Pinout

The SISS27DN-T1-GE3 is a dual N-channel MOSFET in a PowerPAK® SO-8 package.
- Pin Count: 8 pins (standard SO-8 footprint).
- Function: Designed for high-efficiency power switching applications, such as DC-DC converters and load switching.
- Key Features:
- Low on-resistance (RDS(on)) for reduced conduction losses.
- Optimized for synchronous rectification.
- Logic-level gate drive compatibility.
Pins typically include dual drain (D1, D2), dual source (S1, S2), and dual gate (G1, G2) connections, with some pins internally connected for thermal performance.

Manufacturer

The SISS27DN-T1-GE3 is a MOSFET manufactured by Vishay Intertechnology, a global leader in semiconductors and passive electronic components.
Vishay is a well-established company (founded in 1962) known for producing high-performance discrete semiconductors, diodes, resistors, and capacitors. It serves industries like automotive, industrial, computing, and consumer electronics.
The SISS27DN-T1-GE3 is part of Vishay’s TrenchFET® Gen IV power MOSFET series, optimized for efficiency in power management applications.

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