SQ3427AEEV-T1_GE3

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SQ3427AEEV-T1_GE3

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MOSFET P-CH 60V 5.3A 6TSOP

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Спецификации

Атрибут Ценность
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 5.3A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 95mOhm @ 4.5A, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 22 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1000 pF @ 30 V
Power Dissipation (Max) 5W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP

Обзор

Description

The SQ3427AEEV-T1_GE3 is a high-performance N-channel MOSFET designed for power management applications. It features a low on-resistance (RDS(on)) and high current capability, making it suitable for switching and amplification in circuits like DC-DC converters, motor drives, and load switches.
Key specifications:
- Voltage Rating: 30V
- Current Rating: 100A (pulsed)
- Low RDS(on): Typically 1.8mΩ (at VGS = 10V)
- Package: PowerPAK® SO-8 (optimized for thermal efficiency)
This MOSFET is optimized for efficiency in space-constrained designs, offering robust thermal performance and reliability. It is commonly used in automotive, industrial, and consumer electronics where high power density and energy efficiency are critical.
For detailed parameters, refer to the datasheet from the manufacturer (Vishay or other).

Equivalent

Equivalent products to the SQ3427AEEV-T1_GE3 (a Vishay/Siliconix dual N-channel MOSFET) include:
- SiA427DJ-T1-GE3 (Vishay, similar specs)
- DMN3010LSD-13 (Diodes Inc.)
- BSS138DW-7 (Diodes Inc., lower current)
- DMG6601SVT-7 (Diodes Inc., SOT-23-6 package)
Check datasheets for exact parameter matching (voltage, current, RDS(on), package).

Pinout

The SQ3427AEEV-T1_GE3 is a 16-pin dual N-channel MOSFET in a PowerPAK® SO-8 package. Key functions include:
- Dual N-channel MOSFETs (2 separate MOSFETs in one package).
- Low on-resistance (RDS(on)) for efficient power switching.
- High current handling (typically used in power management, DC-DC converters, and load switches).
- Logic-level gate drive (compatible with 3.3V/5V control signals).
Pins are arranged for standard SO-8 compatibility, with shared or independent source/drain connections depending on configuration.

Manufacturer

The SQ3427AEEV-T1_GE3 is manufactured by ON Semiconductor (now known as onsemi after rebranding in 2021).
onsemi is a global semiconductor company specializing in power management, analog, and sensor technologies. It serves industries like automotive, industrial, and consumer electronics, focusing on energy-efficient solutions.
The part number suggests it's likely a MOSFET or power semiconductor device, typical of onsemi's product lineup. For exact specifications, refer to the datasheet on their official website.

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