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STD3NK80ZT4
+БОМMOSFET N-CH 800V 2.5A DPAK
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ПроизводительSTМикроэлектроника
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Мфр. Часть #STD3NK80ZT4
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Лист данных STD3NK80ZT4 DataSheet
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В наличии6289
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Спецификации
| Атрибут | Ценность |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 2.5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.5Ohm @ 1.25A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 19 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 485 pF @ 25 V |
| PowerDissipation(Max) | 70W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DPAK |
Обзор
Description
- Type: N-channel MOSFET (high-voltage, low-current).
- Voltage Rating: 800V (suggested by "80" in the code).
- Current Rating: Likely ~3A (indicated by "3" in the code).
- Package: Possibly TO-252 (DPAK) or similar surface-mount.
- Application: Used in power switching, converters, or motor control.
For precise details, refer to the manufacturer’s datasheet (e.g., STMicroelectronics may produce similar parts). Always verify markings and specifications for accuracy.
Equivalent
- STP3NK80ZFP (similar specs, TO-220FP package)
- IRF840 (500V, 8A, but common substitute)
- FQP3N80 (800V, 3A, TO-220)
- 2SK2837 (800V, 3A, Toshiba)
Check datasheets for exact compatibility in your application.
Features
- Voltage Rating: 800V (high-voltage capability)
- Current Rating: 3A (continuous drain current)
- Low On-Resistance (RDS(on)): 3.5Ω (typical) for reduced conduction losses
- Fast Switching: Optimized for high-speed applications
- Low Gate Charge (Qg): Enhances efficiency in switching circuits
- Avalanche Energy Rated: Improves reliability in harsh conditions
- Package: TO-252 (DPAK), surface-mount design
- Applications: Power supplies, lighting, motor control, and industrial systems
This MOSFET is designed for efficiency and robustness in high-voltage switching applications.
Pinout
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connected to the load (high-voltage side).
3. Source (S) – Connected to ground (low-voltage side).
Key Features:
- 800V drain-source voltage (VDS).
- 3A continuous drain current (ID).
- Low on-resistance (RDS(on)).
- Suitable for switching applications (e.g., power supplies, motor control).
This MOSFET is commonly used in high-voltage, low-power circuits.
Manufacturer
STMicroelectronics is a multinational corporation headquartered in Geneva, Switzerland, specializing in analog, digital, and power semiconductors for a wide range of applications, including automotive, industrial, and consumer electronics. Known for innovation and reliability, STMicroelectronics is a key player in the semiconductor industry.
The STD3NK80ZT4 is designed for high-voltage, high-efficiency switching applications.
Application
- Switched-Mode Power Supplies (SMPS) – Used in AC-DC and DC-DC converters.
- Motor Control – Drives motors in industrial and automotive systems.
- Lighting Solutions – Powers LED drivers and ballasts.
- Power Management – Efficient switching in UPS, inverters, and battery chargers.
- Industrial Automation – Controls solenoids, relays, and inductive loads.
Its 800V drain-source voltage and low on-resistance make it suitable for high-voltage, high-speed switching with minimal losses.
