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STD4NK60ZT4
+БОМMOSFET N-CH 600V 4A DPAK
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ПроизводительSTМикроэлектроника
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Мфр. Часть #STD4NK60ZT4
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Лист данных STD4NK60ZT4 DataSheet
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Пакет TO-252-3
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В наличии6445
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
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Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | SuperMESH™ |
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 4A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 2Ohm @ 2A, 10V |
| Vgs(th)(Max) @ Id | 4.5V @ 50µA |
| Gate Charge(Qg)(Max) @ Vgs | 26 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 510 pF @ 25 V |
| Power Dissipation (Max) | 70W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
Обзор
Description
- 600V Drain-Source Voltage (VDSS) – Suitable for high-voltage circuits.
- 4A Continuous Drain Current (ID) – Handles moderate power loads.
- Low On-Resistance (RDS(on)) – Typically 1.8Ω (max), reducing conduction losses.
- Fast Switching – Optimized for applications like power supplies, motor control, and lighting.
- Avalanche Rugged – Enhances reliability in inductive loads.
Packaged in TO-252 (DPAK), it offers good thermal performance. Ideal for offline SMPS, inverters, and industrial systems.
For detailed specs, refer to the datasheet.
Equivalent
- STP4NK60ZFP (similar specs, TO-220FP package)
- IRF840 (500V, 8A, common alternative)
- FQP4N60 (600V, 4A, TO-220 package)
- 2SK3562 (600V, 4A, N-channel MOSFET)
Check datasheets for exact compatibility in your circuit.
Features
- Voltage Rating: 600V (drain-source)
- Current Rating: 4A (continuous drain current)
- Low On-Resistance: 1.5Ω (max) @ 10V VGS
- Fast Switching: Optimized for high-speed applications
- Low Gate Charge: Enhances efficiency in switching circuits
- Avalanche Energy Rated: Improves ruggedness
- Package: TO-252 (DPAK), surface-mount design
- Applications: Power supplies, motor control, lighting, and inverters
This MOSFET is designed for efficiency and reliability in medium-power switching applications.
Pinout
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the high-voltage load.
3. Source (S) – Connects to ground.
4. Kelvin Source (S2) – Improves switching performance by reducing parasitic inductance.
Key features:
- 600V drain-source voltage
- 4A continuous drain current
- Low gate charge for efficient switching
Used in power supplies, motor control, and lighting applications.