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STD80N4F6
+БОМMOSFET N-CH 40V 80A DPAK
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ПроизводительSTМикроэлектроника
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Мфр. Часть #STD80N4F6
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Лист данных STD80N4F6 DataSheet
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Пакет TO-252-3
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В наличии2191
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 80A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 6mOhm @ 40A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 36 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2150 pF @ 25 V |
| Power Dissipation (Max) | 70W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
Обзор
Description
- Voltage Rating: 40V
- Current Rating: 80A (continuous)
- Low On-Resistance (RDS(on)): 4.6mΩ (max at 10V VGS)
- Fast Switching: Optimized for high-speed operation
- Package: TO-252 (DPAK), suitable for compact designs
It is commonly used in DC-DC converters, motor control, and power management systems where low conduction losses and high current handling are critical. The device also includes built-in protection features like avalanche ruggedness for reliability in harsh conditions.
For detailed specs, refer to the STMicroelectronics datasheet.
Equivalent
- Infineon IPD90N04S4
- Vishay SQJ480EP
- ON Semiconductor NTMFS4C06N
- Renesas RJK0305DPB
These alternatives offer similar voltage, RDS(on), and current ratings. Always verify datasheet specs for exact compatibility.
