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STP34N65M5
+БОМMOSFET N-CH 650V 28A TO220
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ПроизводительSTМикроэлектроника
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Мфр. Часть #STP34N65M5
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Лист данных STP34N65M5 DataSheet
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В наличии4176
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Series | MDmesh™ V |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 28A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 110mOhm @ 14A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 62.5 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 2700 pF @ 100 V |
| PowerDissipation(Max) | 190W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
| Package/Case | TO-220-3 |
| BaseProductNumber | STP34 |
Обзор
Description
Key characteristics include low on-resistance (R_DS(on)), which minimizes conduction losses, and fast switching speeds, allowing for efficient operation in high-frequency circuits. The MOSFET also has a gate threshold voltage (V_GS(th)) of 2-4V, enabling it to be driven with standard logic levels.
The package type typically used is TO-220, which aids in effective heat dissipation, ensuring reliability under load. Overall, the STP34N65M5 is a versatile component favored in designs that require robust performance in high-voltage environments.
Equivalent
Features
- Voltage Rating: 650V maximum drain-source voltage (V_DS), suitable for high-voltage circuits.
- Current Rating: Can handle a continuous drain current of up to 34A at 25°C.
- R_DS(on): Low on-resistance of 0.25Ω (typical) at V_GS = 10V, ensuring efficient performance with minimal power loss.
- Gate Threshold Voltage: V_GS(th) ranges from 2 to 4V, allowing for flexible driving options.
- Capacitance: Low input and output capacitance, which aids in fast switching and reduces gate drive requirements.
- Package: Available in an TO-220 package, providing good thermal performance for heat dissipation.
Overall, the STP34N65M5 is ideal for applications like switch-mode power supplies, inverters, and motor drives, where efficiency and reliability are crucial.
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the output where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It is the return path for the current flowing through the MOSFET.
The STP34N65M5 is designed for high voltage applications, supporting a drain-source voltage of 650V and a continuous drain current of up to 34A, making it suitable for various switching applications in power electronics.
Manufacturer
The company serves various markets, such as automotive, industrial, personal electronics, and communication, offering products that enable energy efficiency, connectivity, and advanced functionality in electronic systems. STMicroelectronics is known for its innovation in power management, analog and digital ICs, and MEMS (Micro-Electro-Mechanical Systems) technology. The STP34N65M5 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), commonly used in applications like power supplies, motor drives, and other high-voltage switching applications due to its high voltage and current handling capabilities.
Application
1. Switching Power Supplies: Efficient voltage regulation in converters.
2. Motor Control: Driving electric motors in industrial and automotive applications.
3. LED Drivers: Controlling LED lighting systems for brightness and energy efficiency.
4. DC-DC Converters: Used in step-up or step-down conversion circuits.
5. Inverters: Converting DC to AC in renewable energy systems and uninterruptible power supplies (UPS).
Its high voltage and current rating make it suitable for these diverse applications.