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STP3NK80Z
+БОМMOSFET N-CH 800V 2.5A TO220AB
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ПроизводительSTМикроэлектроника
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Мфр. Часть #STP3NK80Z
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Лист данных STP3NK80Z DataSheet
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В наличии17052
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | SuperMESH™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 800 V |
| Current-ContinuousDrain(Id)@25°C | 2.5A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.5Ohm @ 1.25A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 19 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 485 pF @ 25 V |
| PowerDissipation(Max) | 70W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
Обзор
Description
The STP3NK80Z is commonly used in applications like power supplies, converters, and other power management systems, where its characteristics help minimize energy loss and enhance overall system performance. It is packaged in a TO-220 form factor, allowing for efficient heat dissipation, and it is designed to handle significant power in a compact size, which is crucial for modern electronic devices that demand both performance and space efficiency. Its robust design also ensures reliability and longevity in various operating conditions.
Equivalent
1. IRF840 - by International Rectifier
2. NTE2987 - by NTE Electronics
3. FQA8N80C - by Fairchild Semiconductor
4. TK8A80E - by Toshiba
Ensure to verify the specifications like Vds, Id, Rds(on), and package type for compatibility in your application.
Features
1. VDSS (Drain-Source Voltage): Rated at 800V, suitable for high-voltage applications.
2. RDS(on) (On-Resistance): Low on-state resistance of approximately 3.6Ω, improving efficiency by reducing power loss during operation.
3. ID (Drain Current): Can handle a continuous drain current of up to 3A, making it suitable for moderate power applications.
4. Package Type: Commonly available in TO-220 package, offering good thermal performance.
5. Enhanced Avalanche Ruggedness: It can withstand high-energy pulses in avalanche mode, providing reliability in demanding conditions.
6. Applications: Ideal for use in switching applications like power supplies, motor drives, and lighting systems.
7. Low Gate Charge: Features a low gate charge (Qg), ensuring efficient switching and low driving power requirements.
These features make the STP3NK80Z suitable for various power management applications, particularly where high voltage and moderate current handling are required.
Pinout
1. Gate (G): This pin is responsible for turning the MOSFET on and off. A voltage applied to the gate controls the flow of current between the drain and source.
2. Drain (D): Current flows from the drain to the source when the MOSFET is on. It is the pin through which the output current enters the device.
3. Source (S): The source is the pin through which current exits the device. It is typically connected to the ground or the negative side of the power supply.
The STP3NK80Z is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 800V, and is used in power switching applications. It offers low gate charge and is efficient for use in various circuits, including power supplies and converters.
Manufacturer
Application
1. Switching Power Supplies: Efficient in managing power conversion processes.
2. Motor Control: Suitable for driving motors in various industrial and consumer applications.
3. Lighting Systems: Ideal for LED drivers and other lighting control systems.
4. Inverters: Used in renewable energy systems like solar inverters.
5. Adapters and Chargers: Provides reliable switching for power adapters and battery chargers.
Its high voltage and current handling capabilities make it versatile for applications that require efficient power management and control.