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SVF23N50PN
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ПроизводительХанчжоу Силан Микроэлектроника
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Мфр. Часть #SVF23N50PN
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Лист данных SVF23N50PN DataSheet
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В наличии12378
365 Дни гарантии качества
7*24 часы обслуживания каранти
90-гарантия послепродажного дня
Гарантия подлинного продукта
Спецификации
| Атрибут | Ценность |
| Manufacturer | Hangzhou Silan Microelectronics |
| Package | TO-3P-3 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Current - Continuous Drain(Id) | 23A |
| Pd - Power Dissipation | 280W |
| Drain to Source Voltage | 500V |
| RDS(on) | 210mΩ@10V,11.5A |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V |
| Type | 1 N-channel |
| Gate Charge(Qg) | 42.51nC@10V |
| Input Capacitance(Ciss@Vds) | 2595.8pF@25V |
| Reverse Transfer Capacitance (Crss@Vds) | 10.1pF@25V |
Обзор
Description
Key characteristics of the SVF23N50PN include a low on-resistance, which minimizes power losses during operation, and fast switching speeds, which enhance performance in high-frequency applications. The transistor is housed in a TO-247 package, providing good thermal performance and making it suitable for applications requiring efficient heat dissipation. Its robust design ensures reliability and long-term stability under various operating conditions.
Overall, the SVF23N50PN is valued for its efficiency, reliability, and versatility in a wide range of power electronic applications, making it a common choice for engineers and designers working on advanced power systems.
Equivalent
Features
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (Vds) of 500V and a continuous drain current (Id) of 23A, making it suitable for high-power applications.
2. Low On-Resistance: The MOSFET features a low on-state resistance (Rds(on)), which ensures higher efficiency by minimizing power losses during operation.
3. Fast Switching Speed: Designed for rapid switching applications, allowing for efficient performance in power management circuits.
4. Thermal Management: Often comes with good thermal characteristics, supporting efficient heat dissipation, which is crucial for maintaining reliability in demanding environments.
5. Enhanced Ruggedness: It has robust construction to handle higher power loads and is resistant to voltage spikes and surges.
6. Applications: Commonly used in power supplies, motor drives, and other applications requiring efficient power conversion and management.
This combination of features makes the SVF23N50PN a versatile choice for various high-power electronic applications.
Pinout
1. Gate (G): This pin is responsible for controlling the MOSFET's operation. A voltage applied to the gate controls the conduction state between the drain and source.
2. Drain (D): This is the main terminal through which the current flows when the MOSFET is in the "on" state. It is the terminal that is connected to the load.
3. Source (S): This pin serves as the return path for the current flowing through the drain. It is usually connected to ground or to the negative side of the power supply.
The SVF23N50PN is designed for high-voltage, high-speed applications, typically used in power conversion, motor control, and other power management applications.
Manufacturer
Application
1. Switching Power Supplies: Efficiently manages power conversion in SMPS for consumer electronics and industrial equipment.
2. Motor Control: Utilized in driving and controlling motors in appliances and automotive systems.
3. Lighting Systems: Used in LED drivers and ballast circuits for efficient lighting solutions.
4. Inverters and Converters: Integral in DC-AC inverters and DC-DC converters, crucial for renewable energy systems and battery management.
5. Audio Amplifiers: Employed in high-power audio systems for enhancing sound quality and efficiency.